High sensitivity 12 GB/S monolithically integrated pin-HEMT photoreceivers

P. Fay, I. Adesida, C. Caneau, S. Chandrasekhar

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The design, fabrication, and performance of a long-wavelength high-speed monolithically integrated photoreceiver suitable for receiving 12 Gb/s data is reported. The photoreceiver has been fabricated in a single growth run using lattice-matched materials on a planar InP substrate by organometallic vapor phase epitaxy (OMVPE). The circuit design employs a three-stage transimpedance preamplifier topology based on high electron mobility transistors (HEMTs) and a top-illuminated pin photodiode. The completed photoreceiver demonstrated an optoelectronic -3 dB bandwidth of 8.3 GHz, with an average input-referred noise current spectral density of 8.8 pA/Hz 1/2 . Bit error rate measurements of packaged photoreceivers showed a sensitivity (at a bit error ratio of 10-9) of -17.7 dBm at 10 Gb/s and -15.8 dBm at 12 Gb/s, for a 231-1 pattern-length pseudorandom bit stream at a wavelength of 1.55 μm. To the author's knowledge, this is the best directly-measured sensitivity for a HEMT-based integrated photoreceiver at these bit rates.

Original languageEnglish
Pages (from-to)439-442
Number of pages4
JournalConference Proceedings - International Conference on Indium Phosphide and Related Materials
Publication statusPublished - 1998
Externally publishedYes

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High electron mobility transistors
high electron mobility transistors
sensitivity
Wavelength
Vapor phase epitaxy
Spectral density
preamplifiers
Organometallics
bit error rate
Photodiodes
vapor phase epitaxy
wavelengths
Optoelectronic devices
Bit error rate
photodiodes
topology
high speed
Topology
bandwidth
Bandwidth

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

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title = "High sensitivity 12 GB/S monolithically integrated pin-HEMT photoreceivers",
abstract = "The design, fabrication, and performance of a long-wavelength high-speed monolithically integrated photoreceiver suitable for receiving 12 Gb/s data is reported. The photoreceiver has been fabricated in a single growth run using lattice-matched materials on a planar InP substrate by organometallic vapor phase epitaxy (OMVPE). The circuit design employs a three-stage transimpedance preamplifier topology based on high electron mobility transistors (HEMTs) and a top-illuminated pin photodiode. The completed photoreceiver demonstrated an optoelectronic -3 dB bandwidth of 8.3 GHz, with an average input-referred noise current spectral density of 8.8 pA/Hz 1/2 . Bit error rate measurements of packaged photoreceivers showed a sensitivity (at a bit error ratio of 10-9) of -17.7 dBm at 10 Gb/s and -15.8 dBm at 12 Gb/s, for a 231-1 pattern-length pseudorandom bit stream at a wavelength of 1.55 μm. To the author's knowledge, this is the best directly-measured sensitivity for a HEMT-based integrated photoreceiver at these bit rates.",
author = "P. Fay and I. Adesida and C. Caneau and S. Chandrasekhar",
year = "1998",
language = "English",
pages = "439--442",
journal = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",
issn = "1092-8669",
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T1 - High sensitivity 12 GB/S monolithically integrated pin-HEMT photoreceivers

AU - Fay, P.

AU - Adesida, I.

AU - Caneau, C.

AU - Chandrasekhar, S.

PY - 1998

Y1 - 1998

N2 - The design, fabrication, and performance of a long-wavelength high-speed monolithically integrated photoreceiver suitable for receiving 12 Gb/s data is reported. The photoreceiver has been fabricated in a single growth run using lattice-matched materials on a planar InP substrate by organometallic vapor phase epitaxy (OMVPE). The circuit design employs a three-stage transimpedance preamplifier topology based on high electron mobility transistors (HEMTs) and a top-illuminated pin photodiode. The completed photoreceiver demonstrated an optoelectronic -3 dB bandwidth of 8.3 GHz, with an average input-referred noise current spectral density of 8.8 pA/Hz 1/2 . Bit error rate measurements of packaged photoreceivers showed a sensitivity (at a bit error ratio of 10-9) of -17.7 dBm at 10 Gb/s and -15.8 dBm at 12 Gb/s, for a 231-1 pattern-length pseudorandom bit stream at a wavelength of 1.55 μm. To the author's knowledge, this is the best directly-measured sensitivity for a HEMT-based integrated photoreceiver at these bit rates.

AB - The design, fabrication, and performance of a long-wavelength high-speed monolithically integrated photoreceiver suitable for receiving 12 Gb/s data is reported. The photoreceiver has been fabricated in a single growth run using lattice-matched materials on a planar InP substrate by organometallic vapor phase epitaxy (OMVPE). The circuit design employs a three-stage transimpedance preamplifier topology based on high electron mobility transistors (HEMTs) and a top-illuminated pin photodiode. The completed photoreceiver demonstrated an optoelectronic -3 dB bandwidth of 8.3 GHz, with an average input-referred noise current spectral density of 8.8 pA/Hz 1/2 . Bit error rate measurements of packaged photoreceivers showed a sensitivity (at a bit error ratio of 10-9) of -17.7 dBm at 10 Gb/s and -15.8 dBm at 12 Gb/s, for a 231-1 pattern-length pseudorandom bit stream at a wavelength of 1.55 μm. To the author's knowledge, this is the best directly-measured sensitivity for a HEMT-based integrated photoreceiver at these bit rates.

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