High sensitivity 12 GB/S monolithically integrated pin-HEMT photoreceivers

P. Fay, I. Adesida, C. Caneau, S. Chandrasekhar

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

The design, fabrication, and performance of a long-wavelength high-speed monolithically integrated photoreceiver suitable for receiving 12 Gb/s data is reported. The photoreceiver has been fabricated in a single growth run using lattice-matched materials on a planar InP substrate by organometallic vapor phase epitaxy (OMVPE). The circuit design employs a three-stage transimpedance preamplifier topology based on high electron mobility transistors (HEMTs) and a top-illuminated pin photodiode. The completed photoreceiver demonstrated an optoelectronic -3 dB bandwidth of 8.3 GHz, with an average input-referred noise current spectral density of 8.8 pA/Hz 1/2 . Bit error rate measurements of packaged photoreceivers showed a sensitivity (at a bit error ratio of 10-9) of -17.7 dBm at 10 Gb/s and -15.8 dBm at 12 Gb/s, for a 231-1 pattern-length pseudorandom bit stream at a wavelength of 1.55 μm. To the author's knowledge, this is the best directly-measured sensitivity for a HEMT-based integrated photoreceiver at these bit rates.

Original languageEnglish
Pages (from-to)439-442
Number of pages4
JournalConference Proceedings - International Conference on Indium Phosphide and Related Materials
Publication statusPublished - Dec 1 1998
EventProceedings of the 1998 International Conference on Indium Phosphide and Related Materials - Tsukuba, Jpn
Duration: May 11 1998May 15 1998

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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