High speed cryogenic operation of sub-micron pseudomorphic InGaAs/GaAs FETs

J. Laskar, S. Maranowski, J. Kruse, A. Ketterson, I. Adesida, M. Feng, J. Kolodzey

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Comprehensive DC and high frequency measurements of submicron pseudomorphic AlGaAs/InGaAs MODFETs, InGaAs/GaAs MESFETs, and AlGaAs/InGaAs MISFETs at cryogenic temperatures are discussed. Devices with gate lengths from 0.8 μm to 0.3 μm over a temperature range from 300 K to 110 K were measured. Similar variation in the measured extrinsic current gain cutoff frequency, fT, and similar dependences of the effective electron velocity, veff, with reduced lattice temperature for the different field-effect transistors were determined. These results provide direct experimental evidence that the saturated velocity of electrons is the most important parameter for high speed operation, and with proper design these different pseudomorphic InGaAs/GaAs field-effect transistors provide similar potential for high speed operation.

Original languageEnglish
Title of host publicationProc IEEE Cornell Conf Adv Concepts High Speed Semicond Device Circuit
PublisherPubl by IEEE
Pages445-454
Number of pages10
ISBN (Print)0780304918
Publication statusPublished - 1992
Externally publishedYes
EventIEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits - Ithaca, NY, USA
Duration: Aug 5 1991Aug 7 1991

Other

OtherIEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits
CityIthaca, NY, USA
Period8/5/918/7/91

Fingerprint

Field effect transistors
Cryogenics
Electrons
Cutoff frequency
High electron mobility transistors
Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Laskar, J., Maranowski, S., Kruse, J., Ketterson, A., Adesida, I., Feng, M., & Kolodzey, J. (1992). High speed cryogenic operation of sub-micron pseudomorphic InGaAs/GaAs FETs. In Proc IEEE Cornell Conf Adv Concepts High Speed Semicond Device Circuit (pp. 445-454). Publ by IEEE.

High speed cryogenic operation of sub-micron pseudomorphic InGaAs/GaAs FETs. / Laskar, J.; Maranowski, S.; Kruse, J.; Ketterson, A.; Adesida, I.; Feng, M.; Kolodzey, J.

Proc IEEE Cornell Conf Adv Concepts High Speed Semicond Device Circuit. Publ by IEEE, 1992. p. 445-454.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Laskar, J, Maranowski, S, Kruse, J, Ketterson, A, Adesida, I, Feng, M & Kolodzey, J 1992, High speed cryogenic operation of sub-micron pseudomorphic InGaAs/GaAs FETs. in Proc IEEE Cornell Conf Adv Concepts High Speed Semicond Device Circuit. Publ by IEEE, pp. 445-454, IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, NY, USA, 8/5/91.
Laskar J, Maranowski S, Kruse J, Ketterson A, Adesida I, Feng M et al. High speed cryogenic operation of sub-micron pseudomorphic InGaAs/GaAs FETs. In Proc IEEE Cornell Conf Adv Concepts High Speed Semicond Device Circuit. Publ by IEEE. 1992. p. 445-454
Laskar, J. ; Maranowski, S. ; Kruse, J. ; Ketterson, A. ; Adesida, I. ; Feng, M. ; Kolodzey, J. / High speed cryogenic operation of sub-micron pseudomorphic InGaAs/GaAs FETs. Proc IEEE Cornell Conf Adv Concepts High Speed Semicond Device Circuit. Publ by IEEE, 1992. pp. 445-454
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