High-speed digital and analog performance of low-noise integrated MSM-HEMT photoreceivers

P. Fay, W. Wohlmuth, C. Caneau, S. Chandrasekhar, I. Adesida

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The digital and analog performance of high-speed, monolithically integrated, low-noise metal-semiconductor-metal MSM-HEMT photoreceivers is reported. The MSM photodetectors were vertically integrated with the HEMT's using a stacked layer structure, with the HEMT layers beneath the MSM layers. The photoreceivers were implemented using a HEMT-based low-noise three-stage transimpedance amplifier. The amplifier transimpedance was 803 Ω, and the photoreceivers exhibited -3 dB bandwidths up to 7.2 GHz. Analog noise performance was characterized, and average input-referred noise current spectral densities of 6.5 and 7.3 pA/Hz 1/2 were found for receivers with 1- and 1.5-μm MSM inter-electrode spacings, respectively. The digital performance of the photoreceivers was examined at bit rates up to 10 Gb/s, and open eye patterns obtained. The measured sensitivity for a bit-error rate of 10 -9 was found to be -16.9 and -13.1 dBm at 5 and 8 Gb/s, respectively, for photoreceivers with a 1.5 μm inter-electrode spacing, and -10.7 dBm at 10 Gb/s for photoreceivers with a 1-μm inter-electrode spacing. To the authors' knowledge, this is the first report of multigigabit measured sensitivities of MSM-HEMT photoreceivers on InP substrates.

Original languageEnglish
Pages (from-to)991-993
Number of pages3
JournalIEEE Photonics Technology Letters
Volume9
Issue number7
DOIs
Publication statusPublished - Jul 1 1997
Externally publishedYes

Keywords

  • Integrated optoelectronics
  • Metal-semiconductor-metal photodetectors
  • Photoreceivers

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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