High-speed digital and analog performance of low-noise integrated MSM-HEMT photoreceivers

P. Fay, W. Wohlmuth, C. Caneau, S. Chandrasekhar, I. Adesida

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The digital and analog performance of high-speed, monolithically integrated, low-noise metal-semiconductor-metal MSM-HEMT photoreceivers is reported. The MSM photodetectors were vertically integrated with the HEMT's using a stacked layer structure, with the HEMT layers beneath the MSM layers. The photoreceivers were implemented using a HEMT-based low-noise three-stage transimpedance amplifier. The amplifier transimpedance was 803 Ω, and the photoreceivers exhibited -3 dB bandwidths up to 7.2 GHz. Analog noise performance was characterized, and average input-referred noise current spectral densities of 6.5 and 7.3 pA/Hz 1/2 were found for receivers with 1- and 1.5-μm MSM inter-electrode spacings, respectively. The digital performance of the photoreceivers was examined at bit rates up to 10 Gb/s, and open eye patterns obtained. The measured sensitivity for a bit-error rate of 10 -9 was found to be -16.9 and -13.1 dBm at 5 and 8 Gb/s, respectively, for photoreceivers with a 1.5 μm inter-electrode spacing, and -10.7 dBm at 10 Gb/s for photoreceivers with a 1-μm inter-electrode spacing. To the authors' knowledge, this is the first report of multigigabit measured sensitivities of MSM-HEMT photoreceivers on InP substrates.

Original languageEnglish
Pages (from-to)991-993
Number of pages3
JournalIEEE Photonics Technology Letters
Volume9
Issue number7
DOIs
Publication statusPublished - Jul 1997
Externally publishedYes

Fingerprint

MSM (semiconductors)
High electron mobility transistors
high electron mobility transistors
low noise
high speed
analogs
Operational amplifiers
spacing
Electrodes
electrodes
amplifiers
Metals
Spectral density
sensitivity
bit error rate
Photodetectors
metals
Bit error rate
photometers
receivers

Keywords

  • Integrated optoelectronics
  • Metal-semiconductor-metal photodetectors
  • Photoreceivers

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

High-speed digital and analog performance of low-noise integrated MSM-HEMT photoreceivers. / Fay, P.; Wohlmuth, W.; Caneau, C.; Chandrasekhar, S.; Adesida, I.

In: IEEE Photonics Technology Letters, Vol. 9, No. 7, 07.1997, p. 991-993.

Research output: Contribution to journalArticle

Fay, P. ; Wohlmuth, W. ; Caneau, C. ; Chandrasekhar, S. ; Adesida, I. / High-speed digital and analog performance of low-noise integrated MSM-HEMT photoreceivers. In: IEEE Photonics Technology Letters. 1997 ; Vol. 9, No. 7. pp. 991-993.
@article{ec199cc5abe54abb99d2b2ff2a8dba56,
title = "High-speed digital and analog performance of low-noise integrated MSM-HEMT photoreceivers",
abstract = "The digital and analog performance of high-speed, monolithically integrated, low-noise metal-semiconductor-metal MSM-HEMT photoreceivers is reported. The MSM photodetectors were vertically integrated with the HEMT's using a stacked layer structure, with the HEMT layers beneath the MSM layers. The photoreceivers were implemented using a HEMT-based low-noise three-stage transimpedance amplifier. The amplifier transimpedance was 803 Ω, and the photoreceivers exhibited -3 dB bandwidths up to 7.2 GHz. Analog noise performance was characterized, and average input-referred noise current spectral densities of 6.5 and 7.3 pA/Hz 1/2 were found for receivers with 1- and 1.5-μm MSM inter-electrode spacings, respectively. The digital performance of the photoreceivers was examined at bit rates up to 10 Gb/s, and open eye patterns obtained. The measured sensitivity for a bit-error rate of 10 -9 was found to be -16.9 and -13.1 dBm at 5 and 8 Gb/s, respectively, for photoreceivers with a 1.5 μm inter-electrode spacing, and -10.7 dBm at 10 Gb/s for photoreceivers with a 1-μm inter-electrode spacing. To the authors' knowledge, this is the first report of multigigabit measured sensitivities of MSM-HEMT photoreceivers on InP substrates.",
keywords = "Integrated optoelectronics, Metal-semiconductor-metal photodetectors, Photoreceivers",
author = "P. Fay and W. Wohlmuth and C. Caneau and S. Chandrasekhar and I. Adesida",
year = "1997",
month = "7",
doi = "10.1109/68.593376",
language = "English",
volume = "9",
pages = "991--993",
journal = "IEEE Photonics Technology Letters",
issn = "1041-1135",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "7",

}

TY - JOUR

T1 - High-speed digital and analog performance of low-noise integrated MSM-HEMT photoreceivers

AU - Fay, P.

AU - Wohlmuth, W.

AU - Caneau, C.

AU - Chandrasekhar, S.

AU - Adesida, I.

PY - 1997/7

Y1 - 1997/7

N2 - The digital and analog performance of high-speed, monolithically integrated, low-noise metal-semiconductor-metal MSM-HEMT photoreceivers is reported. The MSM photodetectors were vertically integrated with the HEMT's using a stacked layer structure, with the HEMT layers beneath the MSM layers. The photoreceivers were implemented using a HEMT-based low-noise three-stage transimpedance amplifier. The amplifier transimpedance was 803 Ω, and the photoreceivers exhibited -3 dB bandwidths up to 7.2 GHz. Analog noise performance was characterized, and average input-referred noise current spectral densities of 6.5 and 7.3 pA/Hz 1/2 were found for receivers with 1- and 1.5-μm MSM inter-electrode spacings, respectively. The digital performance of the photoreceivers was examined at bit rates up to 10 Gb/s, and open eye patterns obtained. The measured sensitivity for a bit-error rate of 10 -9 was found to be -16.9 and -13.1 dBm at 5 and 8 Gb/s, respectively, for photoreceivers with a 1.5 μm inter-electrode spacing, and -10.7 dBm at 10 Gb/s for photoreceivers with a 1-μm inter-electrode spacing. To the authors' knowledge, this is the first report of multigigabit measured sensitivities of MSM-HEMT photoreceivers on InP substrates.

AB - The digital and analog performance of high-speed, monolithically integrated, low-noise metal-semiconductor-metal MSM-HEMT photoreceivers is reported. The MSM photodetectors were vertically integrated with the HEMT's using a stacked layer structure, with the HEMT layers beneath the MSM layers. The photoreceivers were implemented using a HEMT-based low-noise three-stage transimpedance amplifier. The amplifier transimpedance was 803 Ω, and the photoreceivers exhibited -3 dB bandwidths up to 7.2 GHz. Analog noise performance was characterized, and average input-referred noise current spectral densities of 6.5 and 7.3 pA/Hz 1/2 were found for receivers with 1- and 1.5-μm MSM inter-electrode spacings, respectively. The digital performance of the photoreceivers was examined at bit rates up to 10 Gb/s, and open eye patterns obtained. The measured sensitivity for a bit-error rate of 10 -9 was found to be -16.9 and -13.1 dBm at 5 and 8 Gb/s, respectively, for photoreceivers with a 1.5 μm inter-electrode spacing, and -10.7 dBm at 10 Gb/s for photoreceivers with a 1-μm inter-electrode spacing. To the authors' knowledge, this is the first report of multigigabit measured sensitivities of MSM-HEMT photoreceivers on InP substrates.

KW - Integrated optoelectronics

KW - Metal-semiconductor-metal photodetectors

KW - Photoreceivers

UR - http://www.scopus.com/inward/record.url?scp=0031185579&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031185579&partnerID=8YFLogxK

U2 - 10.1109/68.593376

DO - 10.1109/68.593376

M3 - Article

VL - 9

SP - 991

EP - 993

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

SN - 1041-1135

IS - 7

ER -