High-speed InGaAs-based vertical Schottky barrier photodetectors

W. Wohlmuth, J. W. Seo, P. Fay, C. Caneau, I. Adesida

Research output: Contribution to journalArticle

Abstract

A high speed and high responsivity vertical InGaAs-based Schottky photodetector was designed and fabricated It utilizes a lattice matched InAlAs Schottky barrier height enhancement layer and a film of indium tin oxide (ITO) to form both a Schottky contact and an antireflective coating to 1.31 μm optical radiation. Responsivities of up to 0.59 A/W were obtained in conjunction with dark current densities below 1.10-4 A/cm2 and 3-db bandwidths of 25 GHz.

Original languageEnglish
Pages (from-to)490-493
Number of pages4
JournalConference Proceedings - International Conference on Indium Phosphide and Related Materials
Publication statusPublished - 1997
Externally publishedYes

Fingerprint

Dark currents
Photodetectors
dark current
Tin oxides
indium oxides
Indium
tin oxides
photometers
electric contacts
Current density
high speed
current density
bandwidth
Bandwidth
coatings
Radiation
Coatings
augmentation
radiation
indium tin oxide

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

High-speed InGaAs-based vertical Schottky barrier photodetectors. / Wohlmuth, W.; Seo, J. W.; Fay, P.; Caneau, C.; Adesida, I.

In: Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 1997, p. 490-493.

Research output: Contribution to journalArticle

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