Ge/Ag/Ni metallisation with an overlay of Ti/Pt/Au was investigated as ohmic contact on an InAlAs/InGaAs/InP high electron mobility transistor (HEMT) structure. Its electrical characteristics were measured after annealing and compared with those of AuGe/Ni/Au and AuGe/Ni ohmic contacts. It was found to have ohmic contact resistance as low as those for AuGe/Ni/Au and AuGe/Ni metallisations but with much higher annealing temperatures and larger processing latitude.
ASJC Scopus subject areas
- Electrical and Electronic Engineering