High temperature current-voltage characteristics of Pd Schottky contacts on n-type GaN have been investigated up to 500°C. The effects of high temperature annealing on barrier height and the ideality factor of the Schottky contacts were investigated. From the trend of barrier height and ideality, Pd metal is suitable as the gate metal of GaN-based FETs for temperatures below 300°C.
- Gallium nitride
- Schottky barriers
ASJC Scopus subject areas
- Electrical and Electronic Engineering