High temperature characteristics of Pd Schottky contacts on n-type GaN

A. C. Schmitz, A. T. Ping, M. Asif Khan, Q. Chen, J. W. Yang, I. Adesida

Research output: Contribution to journalArticlepeer-review

43 Citations (Scopus)

Abstract

High temperature current-voltage characteristics of Pd Schottky contacts on n-type GaN have been investigated up to 500°C. The effects of high temperature annealing on barrier height and the ideality factor of the Schottky contacts were investigated. From the trend of barrier height and ideality, Pd metal is suitable as the gate metal of GaN-based FETs for temperatures below 300°C.

Original languageEnglish
Pages (from-to)1832-1833
Number of pages2
JournalElectronics Letters
Volume32
Issue number19
DOIs
Publication statusPublished - Sep 12 1996
Externally publishedYes

Keywords

  • Gallium nitride
  • Schottky barriers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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