High transconductance AlGaN/GaN heterostructure field effect transistors on SiC substrates

Q. Chen, J. W. Yang, M. A. Kahn, A. T. Ping, I. Adesida

Research output: Contribution to journal › Article

38 Citations (Scopus)

Abstract

Heterostructure field effect transistors have been fabricated using AlGaN/GaN heterostructures grown on n-type SiC substrates. These 0.25μm-gate devices exhibited a high drain current and DC transconductance of 1.71 A/mm and 222 mS/mm, respectively. In sharp contrast to the high current density HFETs fabricated on sapphire substrates was the absence of the negative differential resistance in the drain characteristics. A drain-to-gate breakdown voltage of 39V was also obtained.

Original languageEnglish
Pages (from-to)1413-1415
Number of pages3
JournalElectronics Letters
Volume33
Issue number16
Publication statusPublished - Jul 31 1997
Externally publishedYes

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Transconductance
High electron mobility transistors
Drain current
Substrates
Electric breakdown
Sapphire
Heterojunctions
Current density

Keywords

  • Field effect transistors
  • Silicon carbide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

High transconductance AlGaN/GaN heterostructure field effect transistors on SiC substrates. / Chen, Q.; Yang, J. W.; Kahn, M. A.; Ping, A. T.; Adesida, I.

In: Electronics Letters, Vol. 33, No. 16, 31.07.1997, p. 1413-1415.

Research output: Contribution to journal › Article

Chen, Q, Yang, JW, Kahn, MA, Ping, AT & Adesida, I 1997, 'High transconductance AlGaN/GaN heterostructure field effect transistors on SiC substrates', Electronics Letters, vol. 33, no. 16, pp. 1413-1415.
Chen Q, Yang JW, Kahn MA, Ping AT, Adesida I. High transconductance AlGaN/GaN heterostructure field effect transistors on SiC substrates. Electronics Letters. 1997 Jul 31;33(16):1413-1415.
Chen, Q. ; Yang, J. W. ; Kahn, M. A. ; Ping, A. T. ; Adesida, I. / High transconductance AlGaN/GaN heterostructure field effect transistors on SiC substrates. In: Electronics Letters. 1997 ; Vol. 33, No. 16. pp. 1413-1415.
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