Abstract
Heterostructure field effect transistors have been fabricated using AlGaN/GaN heterostructures grown on n-type SiC substrates. These 0.25μm-gate devices exhibited a high drain current and DC transconductance of 1.71 A/mm and 222 mS/mm, respectively. In sharp contrast to the high current density HFETs fabricated on sapphire substrates was the absence of the negative differential resistance in the drain characteristics. A drain-to-gate breakdown voltage of 39V was also obtained.
Original language | English |
---|---|
Pages (from-to) | 1413-1415 |
Number of pages | 3 |
Journal | Electronics Letters |
Volume | 33 |
Issue number | 16 |
DOIs | |
Publication status | Published - Jul 31 1997 |
Externally published | Yes |
Keywords
- Field effect transistors
- Silicon carbide
ASJC Scopus subject areas
- Electrical and Electronic Engineering