Abstract
Heterostructure field effect transistors have been fabricated using AlGaN/GaN heterostructures grown on n-type SiC substrates. These 0.25μm-gate devices exhibited a high drain current and DC transconductance of 1.71 A/mm and 222 mS/mm, respectively. In sharp contrast to the high current density HFETs fabricated on sapphire substrates was the absence of the negative differential resistance in the drain characteristics. A drain-to-gate breakdown voltage of 39V was also obtained.
| Original language | English |
|---|---|
| Pages (from-to) | 1413-1415 |
| Number of pages | 3 |
| Journal | Electronics Letters |
| Volume | 33 |
| Issue number | 16 |
| DOIs | |
| Publication status | Published - Jul 31 1997 |
| Externally published | Yes |
Keywords
- Field effect transistors
- Silicon carbide
ASJC Scopus subject areas
- Electrical and Electronic Engineering
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Cite this
Chen, Q., Yang, J. W., Kahn, M. A., Ping, A. T., & Adesida, I. (1997). High transconductance AlGaN/GaN heterostructure field effect transistors on SiC substrates. Electronics Letters, 33(16), 1413-1415. https://doi.org/10.1049/el:19970933