High transconductance AlGaN/GaN heterostructure field effect transistors on SiC substrates

Q. Chen; J. W. Yang; M. A. Kahn; A. T. Ping; I. Adesida

doi:10.1049/el:19970933

High transconductance AlGaN/GaN heterostructure field effect transistors on SiC substrates

Q. Chen, J. W. Yang, M. A. Kahn, A. T. Ping, I. Adesida

Research output: Contribution to journal › Article › peer-review

38 Citations (Scopus)

Abstract

Heterostructure field effect transistors have been fabricated using AlGaN/GaN heterostructures grown on n-type SiC substrates. These 0.25μm-gate devices exhibited a high drain current and DC transconductance of 1.71 A/mm and 222 mS/mm, respectively. In sharp contrast to the high current density HFETs fabricated on sapphire substrates was the absence of the negative differential resistance in the drain characteristics. A drain-to-gate breakdown voltage of 39V was also obtained.

Original language	English
Pages (from-to)	1413-1415
Number of pages	3
Journal	Electronics Letters
Volume	33
Issue number	16
DOIs	https://doi.org/10.1049/el:19970933
Publication status	Published - Jul 31 1997
Externally published	Yes

Keywords

Field effect transistors
Silicon carbide

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19970933

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keywords = "Field effect transistors, Silicon carbide",

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AU - Chen, Q.

AU - Yang, J. W.

AU - Kahn, M. A.

AU - Ping, A. T.

AU - Adesida, I.

PY - 1997/7/31

Y1 - 1997/7/31

N2 - Heterostructure field effect transistors have been fabricated using AlGaN/GaN heterostructures grown on n-type SiC substrates. These 0.25μm-gate devices exhibited a high drain current and DC transconductance of 1.71 A/mm and 222 mS/mm, respectively. In sharp contrast to the high current density HFETs fabricated on sapphire substrates was the absence of the negative differential resistance in the drain characteristics. A drain-to-gate breakdown voltage of 39V was also obtained.

AB - Heterostructure field effect transistors have been fabricated using AlGaN/GaN heterostructures grown on n-type SiC substrates. These 0.25μm-gate devices exhibited a high drain current and DC transconductance of 1.71 A/mm and 222 mS/mm, respectively. In sharp contrast to the high current density HFETs fabricated on sapphire substrates was the absence of the negative differential resistance in the drain characteristics. A drain-to-gate breakdown voltage of 39V was also obtained.

KW - Field effect transistors

KW - Silicon carbide

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JF - Electronics Letters

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High transconductance AlGaN/GaN heterostructure field effect transistors on SiC substrates

Abstract

Keywords

ASJC Scopus subject areas

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