High transconductance AlGaN/GaN heterostructure field effect transistors on SiC substrates

Q. Chen, J. W. Yang, M. A. Kahn, A. T. Ping, I. Adesida

Research output: Contribution to journalArticle

38 Citations (Scopus)

Abstract

Heterostructure field effect transistors have been fabricated using AlGaN/GaN heterostructures grown on n-type SiC substrates. These 0.25μm-gate devices exhibited a high drain current and DC transconductance of 1.71 A/mm and 222 mS/mm, respectively. In sharp contrast to the high current density HFETs fabricated on sapphire substrates was the absence of the negative differential resistance in the drain characteristics. A drain-to-gate breakdown voltage of 39V was also obtained.

Original languageEnglish
Pages (from-to)1413-1415
Number of pages3
JournalElectronics Letters
Volume33
Issue number16
DOIs
Publication statusPublished - Jul 31 1997
Externally publishedYes

Keywords

  • Field effect transistors
  • Silicon carbide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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