High-transconductance p-type SiGe modulation-doped field-effect transistor

M. Arafa, P. Fay, I. Adesida, K. Ismail, J. O. Chu, B. S. Meyerson

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

High-transconductance 1.5μm-gate-length p-type modulation-doped field-effect transistors (MODFETs) have been fabricated using standard optical lithography on a high hole-mobility SiGe heterostructure grown by ultrahigh vacuum chemical vapour deposition (UHV-CVD). A maximum DC extrinsic (intrinsic) transconductance of 95mS/mm (138mS/mm) at room temperature has been achieved, which to our knowledge is the highest for p-type field-effect transistors at this gate length. A unity current-gain frequency ft of 2.1 GHz has been measured. The gate leakage current was quite low and was of the order of a few μA/mm. These enhancement-mode devices exhibit reasonable pinch-off characteristics.

Original languageEnglish
Pages (from-to)680-681
Number of pages2
JournalElectronics Letters
Volume31
Issue number8
DOIs
Publication statusPublished - Apr 13 1995

Keywords

  • MODFETs
  • Silicon-germanium

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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