Highly anisotropic photoenhanced wet etching of n-type GaN

C. Youtsey, I. Adesida, G. Bulman

Research output: Contribution to journalArticle

177 Citations (Scopus)

Abstract

A room-temperature photoelectrochemical etching process for n-type GaN films using a 0.04 M KOH solution and Hg arc lamp illumination is described. The process provides highly anisotropic etch profiles and high etch rates (>300 nm/min) at moderate light intensities (50 mW/cm2 @365 nm). The etch rate and photocurrent are characterized as a function of light intensity for stirred and unstirred solutions, and the etch process is found to be diffusion limited for light intensities greater than 20 mW/cm2 @365 nm. A reaction mechanism for the etch process is proposed.

Original languageEnglish
Pages (from-to)2151-2153
Number of pages3
JournalApplied Physics Letters
Volume71
Issue number15
Publication statusPublished - Oct 13 1997
Externally publishedYes

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luminous intensity
etching
arc lamps
photocurrents
illumination
room temperature
profiles

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Highly anisotropic photoenhanced wet etching of n-type GaN. / Youtsey, C.; Adesida, I.; Bulman, G.

In: Applied Physics Letters, Vol. 71, No. 15, 13.10.1997, p. 2151-2153.

Research output: Contribution to journalArticle

Youtsey, C, Adesida, I & Bulman, G 1997, 'Highly anisotropic photoenhanced wet etching of n-type GaN', Applied Physics Letters, vol. 71, no. 15, pp. 2151-2153.
Youtsey, C. ; Adesida, I. ; Bulman, G. / Highly anisotropic photoenhanced wet etching of n-type GaN. In: Applied Physics Letters. 1997 ; Vol. 71, No. 15. pp. 2151-2153.
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