Highly anisotropic photoenhanced wet etching of n-type GaN

C. Youtsey, I. Adesida, G. Bulman

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194 Citations (Scopus)


A room-temperature photoelectrochemical etching process for n-type GaN films using a 0.04 M KOH solution and Hg arc lamp illumination is described. The process provides highly anisotropic etch profiles and high etch rates (>300 nm/min) at moderate light intensities (50 mW/cm2 @365 nm). The etch rate and photocurrent are characterized as a function of light intensity for stirred and unstirred solutions, and the etch process is found to be diffusion limited for light intensities greater than 20 mW/cm2 @365 nm. A reaction mechanism for the etch process is proposed.

Original languageEnglish
Pages (from-to)2151-2153
Number of pages3
JournalApplied Physics Letters
Issue number15
Publication statusPublished - Oct 13 1997

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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