Abstract
For the purpose of identifying the large-signal behavior of transistor devices, the use of linear S-parameter is often inadequate [1]. Large-signal characterization is essential for the estimation and determination of the device performance in the nonlinear domain, and the loadpull process [1][3] is one recommended approach for the characterization, optimization and design of transistor devices and radio-frequency (RF) power amplifiers (PAs).
| Original language | English |
|---|---|
| Pages | 96-107 |
| Number of pages | 12 |
| Volume | 12 |
| No. | 4 |
| Specialist publication | IEEE Microwave Magazine |
| DOIs | |
| Publication status | Published - Jun 2011 |
| Externally published | Yes |
ASJC Scopus subject areas
- Radiation
- Condensed Matter Physics
- Electrical and Electronic Engineering