Highly reflective load-pull

Research output: Contribution to specialist publicationArticle

28 Citations (Scopus)

Abstract

For the purpose of identifying the large-signal behavior of transistor devices, the use of linear S-parameter is often inadequate [1]. Large-signal characterization is essential for the estimation and determination of the device performance in the nonlinear domain, and the loadpull process [1][3] is one recommended approach for the characterization, optimization and design of transistor devices and radio-frequency (RF) power amplifiers (PAs).

Original languageEnglish
Pages96-107
Number of pages12
Volume12
No.4
Specialist publicationIEEE Microwave Magazine
DOIs
Publication statusPublished - Jun 2011
Externally publishedYes

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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