Highly selective etching of InGaAd on InAlAs in HBr plasma

I. Adesida, S. Agarwala, C. Caneau, R. Bhat

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

In this paper, we demonstrate a reactive ion process for the etching of InGaAs on InAlAs with a selectivity of 160. This is the highest selectivity that has ever been reported for this material system.

Original languageEnglish
Title of host publication1993 IEEE 5th International Conference on Indium Phosphide and Related Materials
PublisherPubl by IEEE
Pages529-532
Number of pages4
ISBN (Print)0780309944
Publication statusPublished - Jan 1 1993
Externally publishedYes
Event1993 IEEE International Symposium on Circuits and Systems; Part 1 (of 4) - Paris, Fr
Duration: Apr 19 1993Apr 22 1993

Publication series

Name1993 IEEE 5th International Conference on Indium Phosphide and Related Materials

Other

Other1993 IEEE International Symposium on Circuits and Systems; Part 1 (of 4)
CityParis, Fr
Period4/19/934/22/93

ASJC Scopus subject areas

  • Engineering(all)

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