We report studies of flicker noise in n-type hydrogenated amorphous silicon (a-Si:H) resistive devices from room temperature to about 420 K. The device is first annealed at 450 K and then cooled to room temperature either at a rate of 0.5 K/s or 0.02 K/s. The voltage noise power spectra, S V (f), and the conductance of the device are characterized from room temperature to 420 K. The Arrhenius plots of both S V (f) and the conductance exhibit typical thermal equilibration process commonly observed in a-Si:H materials. Characterizations of the bias dependencies of the noise show that S V (f) deviate from I 2 dependence indicating that the noise arises from a non-linear mechanism. Also, S V (f) scales as to R p where p is dependent on the temperature and the cooling process. Our experimental data provides strong evidence that the flicker noise originates from hydrogen motion within the material. The process appears to cause fluctuations in the device conductance by modulating the percolation path of the carriers.
|Number of pages||4|
|Publication status||Published - Dec 1 1997|
|Event||Proceedings of the 1997 14th International Conference on Noise in Physical Systems and 1/f Fluctuations - Leuven, Belgium|
Duration: Jul 14 1997 → Jul 18 1997
|Conference||Proceedings of the 1997 14th International Conference on Noise in Physical Systems and 1/f Fluctuations|
|Period||7/14/97 → 7/18/97|
ASJC Scopus subject areas