Hydrogen motion and 1/f noise in hydrogen amorphous silicon thin films

W. Y. Ho, Charles Surya

Research output: Contribution to conferencePaper

Abstract

We report studies of flicker noise in n-type hydrogenated amorphous silicon (a-Si:H) resistive devices from room temperature to about 420 K. The device is first annealed at 450 K and then cooled to room temperature either at a rate of 0.5 K/s or 0.02 K/s. The voltage noise power spectra, S V (f), and the conductance of the device are characterized from room temperature to 420 K. The Arrhenius plots of both S V (f) and the conductance exhibit typical thermal equilibration process commonly observed in a-Si:H materials. Characterizations of the bias dependencies of the noise show that S V (f) deviate from I 2 dependence indicating that the noise arises from a non-linear mechanism. Also, S V (f) scales as to R p where p is dependent on the temperature and the cooling process. Our experimental data provides strong evidence that the flicker noise originates from hydrogen motion within the material. The process appears to cause fluctuations in the device conductance by modulating the percolation path of the carriers.

Original languageEnglish
Pages438-441
Number of pages4
Publication statusPublished - Dec 1 1997
Externally publishedYes
EventProceedings of the 1997 14th International Conference on Noise in Physical Systems and 1/f Fluctuations - Leuven, Belgium
Duration: Jul 14 1997Jul 18 1997

Conference

ConferenceProceedings of the 1997 14th International Conference on Noise in Physical Systems and 1/f Fluctuations
CityLeuven, Belgium
Period7/14/977/18/97

ASJC Scopus subject areas

  • Engineering(all)

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    Ho, W. Y., & Surya, C. (1997). Hydrogen motion and 1/f noise in hydrogen amorphous silicon thin films. 438-441. Paper presented at Proceedings of the 1997 14th International Conference on Noise in Physical Systems and 1/f Fluctuations, Leuven, Belgium, .