IIIB-7 Frequency Response of AlInAs/GaInAs/InP Modulation-Doped Field-Effect Transistors at Cryogenic Temperatures

J. Kolodzev, I. Adesida, J. Laskar, S. Boor, S. Reis, A. Ketterson, A. Y. Cho, R. Fischer, D. Sivco

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)
Original languageEnglish
Number of pages1
JournalIEEE Transactions on Electron Devices
Volume35
Issue number12
DOIs
Publication statusPublished - Dec 1988
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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