Improved thermal stability of GaAs/AlGaAs single quantum well by Zn out-diffusion from Zn doped GaAs substrate

Feng Zhao, In W. Choi, Peter Hing, Shu Yuan, Teik K. Ong, Boon S. Ooi, Jian Jiang, Michael C.Y. Chan, Charles Surya, E. H. Li

Research output: Contribution to journalArticle

Abstract

The effects of n-type doping by Si and p-type doping by Zn in the GaAs substrate on the thermal intermixing of undoped GaAs/Al0.24Ga0.76As single quantum well (QW) structures were examined. For comparison, semi-insulating GaAs substrate was also used. Samples with Si-doped GaAs substrate and semi-insulating GaAs substrate show blue shifts that are in agreement with thermal stability studies by other workers. The sample with Zn-doped GaAs substrate however, showed clear evidence of suppressed intermixing by Zn diffusion from the substrate into the QW structure.

Original languageEnglish
Pages (from-to)710-711
Number of pages2
JournalConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume2
Publication statusPublished - Jan 1 2000
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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  • Cite this

    Zhao, F., Choi, I. W., Hing, P., Yuan, S., Ong, T. K., Ooi, B. S., Jiang, J., Chan, M. C. Y., Surya, C., & Li, E. H. (2000). Improved thermal stability of GaAs/AlGaAs single quantum well by Zn out-diffusion from Zn doped GaAs substrate. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, 2, 710-711.