The impulse response of interdigitated InGaAs metal-semiconductor-metal photodetectors (MSMPDs) is modeled using a two dimensional transit-time calculation coupled with an equivalent circuit model of the intrinsic and parasitic elements of the MSMPDs. The simulated and experimental bandwidths of InGaAs MSMPDs with resistive transparent indium-tin-oxide and low-resistivity opaque titanium/gold electrodes are in excellent agreement and were found to be 6 and 11 GHz, respectively. The electrode width and spacing of these devices are 3μm and the active area is 2500 μm2. This model aids in the design of MSMPDs with various electrode geometries, electrode materials, semiconductor materials, and methods of illumination.
|Number of pages||5|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Publication status||Published - 1997|
- Conformal mapping
- Impulse response
ASJC Scopus subject areas
- Physics and Astronomy(all)