Impulse response of metal-semiconductor-metal photodetectors using a conformal mapping technique and extracted circuit parameters

Walter Wohlmuth, Mohamed Arafa, Patrick Fay, Jong Wook Seo, Ilesanmi Adesida

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The impulse response of interdigitated InGaAs metal-semiconductor-metal photodetectors (MSMPDs) is modeled using a two dimensional transit-time calculation coupled with an equivalent circuit model of the intrinsic and parasitic elements of the MSMPDs. The simulated and experimental bandwidths of InGaAs MSMPDs with resistive transparent indium-tin-oxide and low-resistivity opaque titanium/gold electrodes are in excellent agreement and were found to be 6 and 11 GHz, respectively. The electrode width and spacing of these devices are 3μm and the active area is 2500 μm2. This model aids in the design of MSMPDs with various electrode geometries, electrode materials, semiconductor materials, and methods of illumination.

Original languageEnglish
Pages (from-to)652-656
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume36
Issue number2
DOIs
Publication statusPublished - 1997

Keywords

  • Conformal mapping
  • Impulse response
  • Indium-tin-oxide
  • Metal-semiconductor-metal
  • Msm
  • Photodetector

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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