In-plane bandgap control in porous GaN through electroless wet chemical etching

Xiuling Li, Young Woon Kim, Paul W. Bohn, Ilesanmi Adesida

Research output: Contribution to journalArticle

99 Citations (Scopus)

Abstract

Nanoporous GaN structures were formed from crystalline GaN on conducting SiC substrate using metal-assisted electroless etching in HF/H2O 2. Morphology varies as a function of etch time and solution parameters. The resulting porous GaN (PGaN) displays cathodoluminescence (CL) with two bands blue-shifted from the bulk bandgap energy by 103 meV and 352 meV, respectively. Appearance of the blueshifted emission is correlated with the development of highly anisotropic wire-like structures in the morphology, with the higher energy CL band arising from the portion of the structure with the smallest feature sizes. These observations suggest that the blueshifted emission arises from quantum confinement effects. CL imaging indicates that the blueshifted emission is spatially segregated from the band gap emission. Variations in morphology and light emission properties apparent between Pt-coated and uncoated areas likely arise from hole transport and access of solution reagents to the GaN interface.

Original languageEnglish
Pages (from-to)980-982
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number6
DOIs
Publication statusPublished - Feb 11 2002
Externally publishedYes

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etching
cathodoluminescence
light emission
reagents
wire
conduction
energy
metals

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

In-plane bandgap control in porous GaN through electroless wet chemical etching. / Li, Xiuling; Kim, Young Woon; Bohn, Paul W.; Adesida, Ilesanmi.

In: Applied Physics Letters, Vol. 80, No. 6, 11.02.2002, p. 980-982.

Research output: Contribution to journalArticle

Li, Xiuling ; Kim, Young Woon ; Bohn, Paul W. ; Adesida, Ilesanmi. / In-plane bandgap control in porous GaN through electroless wet chemical etching. In: Applied Physics Letters. 2002 ; Vol. 80, No. 6. pp. 980-982.
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