Abstract
A newly developed highly selective reactive-ion-etching process based on HBr plasma has been applied as a gate-recess technique in the fabrication of InAlAs/InGaAs heterostructure FET’s. A typical 0.75-μm gate-length transistor exhibited a threshold voltage of —1.0 V, a maximum extrinsic transconductance of 600 mS/mm, an extrinsic current-gain cutoff frequency of 37 GHz, and a maximum frequency of oscillation of 90 GHz. These dc and RF device parameters compare favorably with that of a corresponding device gate-recessed with a selective wet-etching technique.
Original language | English |
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Pages (from-to) | 425-427 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 14 |
Issue number | 9 |
DOIs | |
Publication status | Published - Sep 1993 |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering