InAlAs/InGaAs high electron mobility transistors on low temperature InAlAs buffer layers by metalorganic chemical vapor deposition

N. Pan, J. Elliott, H. Hendriks, L. Aucoin, P. Fay, I. Adesida

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

InAlAs/InGaAs high electron mobility transistors (HEMT) with excellent high frequency performance were demonstrated. Device sizes of 0.25×50 μm and 0.10×50 μm showed current gain cutoff frequencies of 143 and 205 GHz, respectively. The HEMT structures were grown on a low temperature InAlAs buffer layers designed to eliminate conductive impurity spikes situated at the epitaxial/substrate interface. The highly resistive buffer layer (2×105 Ω cm) was obtained at a growth temperature of 475°C using a combination of trimethylarsenic and arsine as the arsenic sources.

Original languageEnglish
Pages (from-to)212
Number of pages1
JournalApplied Physics Letters
Publication statusPublished - 1995
Externally publishedYes

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high electron mobility transistors
metalorganic chemical vapor deposition
buffers
spikes
arsenic
cut-off
impurities
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

InAlAs/InGaAs high electron mobility transistors on low temperature InAlAs buffer layers by metalorganic chemical vapor deposition. / Pan, N.; Elliott, J.; Hendriks, H.; Aucoin, L.; Fay, P.; Adesida, I.

In: Applied Physics Letters, 1995, p. 212.

Research output: Contribution to journalArticle

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AU - Fay, P.

AU - Adesida, I.

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