InAlAs/InGaAs/InP MODFET's with Uniform Threshold Voltage Obtained by Selective Wet Gate Recess

M. Tong, K. Nummila, Andrew Ketterson, Ilesanmi Adesida, C. Caneau, Rajaram Bhat

Research output: Contribution to journalArticlepeer-review

34 Citations (Scopus)

Abstract

Excellent uniformity in the threshold voltage, transconductance, and current-gain cutoff frequency of InAlAs / InGaAs / InP MODFET's has been achieved using a selective wet gate recess process. An etch rate ratio of 25 was achieved for InGaAs over InAlAs using a 1:1 citric acid:H2O2 solution. By using this solution for gate recessing, we have achieved a threshold voltage standard deviation of 15 mV and a transconductance standard deviation of 15 mS / mm for devices across a quarter of a 2-in-diameter wafer. The average threshold voltage, transconductance, and current-gain cutoff frequency of 1.0-μ.m gate-length devices were -234 mV, 355 mS / mm, and 32 GHz, respectively.

Original languageEnglish
Pages (from-to)525-527
Number of pages3
JournalIEEE Electron Device Letters
Volume13
Issue number10
DOIs
Publication statusPublished - Oct 1992
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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