Inductively coupled plasma-induced damage in AlGaN/GaN HEMTs

F. A. Khan, V. Kumar, I. Adesida

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The effect of damage induced by Ar+ ion bombardment on two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) structure at different bias voltages using an inductively coupled plasma system was studied. The samples were measured before and after etching with respect to mobility and sheet carrier concentration. The value of the bias voltage significantly affected the plasma-induced damage on two-dimensional electron gas properties. However, plasma-induced damage could be easily annealed out by rapid thermal annealing the samples for just 5 s at 500°C.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume5
Issue number2
DOIs
Publication statusPublished - Feb 2002
Externally publishedYes

Fingerprint

Two dimensional electron gas
Inductively coupled plasma
High electron mobility transistors
high electron mobility transistors
Bias voltage
damage
electron gas
Plasmas
Rapid thermal annealing
electric potential
Ion bombardment
Carrier concentration
bombardment
Etching
etching
annealing
aluminum gallium nitride
ions

ASJC Scopus subject areas

  • Electrochemistry
  • Materials Science(all)

Cite this

Inductively coupled plasma-induced damage in AlGaN/GaN HEMTs. / Khan, F. A.; Kumar, V.; Adesida, I.

In: Electrochemical and Solid-State Letters, Vol. 5, No. 2, 02.2002.

Research output: Contribution to journalArticle

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