Inductively coupled plasma-induced damage in AlGaN/GaN HEMTs

F. A. Khan, V. Kumar, I. Adesida

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The effect of damage induced by Ar+ ion bombardment on two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) structure at different bias voltages using an inductively coupled plasma system was studied. The samples were measured before and after etching with respect to mobility and sheet carrier concentration. The value of the bias voltage significantly affected the plasma-induced damage on two-dimensional electron gas properties. However, plasma-induced damage could be easily annealed out by rapid thermal annealing the samples for just 5 s at 500°C.

Original languageEnglish
Pages (from-to)G8-G9
JournalElectrochemical and Solid-State Letters
Issue number2
Publication statusPublished - Feb 1 2002


ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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