Inductively coupled plasma reactive ion etching of AlxGa1-xN for application in laser facet formation

F. A. Khan, L. Zhou, A. T. Ping, I. Adesida

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)


The etching characteristics of AlxGa1-xN grown by metal-organic chemical-vapor deposition were investigated in an inductively coupled plasma (ICP) reactive ion etching system using Cl2/Ar gas mixtures. Etch rate variations with substrate bias voltage, ICP coil power, chamber pressure, Cl2/Ar gas mixture ratios, and gas flow rates were investigated. The optimum chamber pressure for etching was found to be dependent on both the substrate bias voltage and ICP coil power. Auger electron spectroscopy analysis showed that the stoichiometries of the etched Al0.22Ga0.78N surfaces were identical, independent of the etching conditions. Etching results were successfully applied to form highly anisotropic and smooth facets in GaN/InGaN/AlGaN heterostructure laser materials.

Original languageEnglish
Pages (from-to)2750-2754
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number6
Publication statusPublished - Dec 1 1999

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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