Inductively coupled plasma reactive ion etching of AlxGa1-xN for application in laser facet formation

F. A. Khan, L. Zhou, A. T. Ping, I. Adesida

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

The etching characteristics of AlxGa1-xN grown by metal-organic chemical-vapor deposition were investigated in an inductively coupled plasma (ICP) reactive ion etching system using Cl2/Ar gas mixtures. Etch rate variations with substrate bias voltage, ICP coil power, chamber pressure, Cl2/Ar gas mixture ratios, and gas flow rates were investigated. The optimum chamber pressure for etching was found to be dependent on both the substrate bias voltage and ICP coil power. Auger electron spectroscopy analysis showed that the stoichiometries of the etched Al0.22Ga0.78N surfaces were identical, independent of the etching conditions. Etching results were successfully applied to form highly anisotropic and smooth facets in GaN/InGaN/AlGaN heterostructure laser materials.

Original languageEnglish
Pages (from-to)2750-2754
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume17
Issue number6
Publication statusPublished - 1999
Externally publishedYes

Fingerprint

Plasma etching
Reactive ion etching
Inductively coupled plasma
flat surfaces
Etching
etching
Lasers
Bias voltage
pressure chambers
Gas mixtures
lasers
ions
gas mixtures
coils
Organic chemicals
Substrates
Auger electron spectroscopy
Stoichiometry
laser materials
Flow of gases

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)
  • Surfaces and Interfaces

Cite this

@article{60925acde53940a4b0725b7bd041c0b7,
title = "Inductively coupled plasma reactive ion etching of AlxGa1-xN for application in laser facet formation",
abstract = "The etching characteristics of AlxGa1-xN grown by metal-organic chemical-vapor deposition were investigated in an inductively coupled plasma (ICP) reactive ion etching system using Cl2/Ar gas mixtures. Etch rate variations with substrate bias voltage, ICP coil power, chamber pressure, Cl2/Ar gas mixture ratios, and gas flow rates were investigated. The optimum chamber pressure for etching was found to be dependent on both the substrate bias voltage and ICP coil power. Auger electron spectroscopy analysis showed that the stoichiometries of the etched Al0.22Ga0.78N surfaces were identical, independent of the etching conditions. Etching results were successfully applied to form highly anisotropic and smooth facets in GaN/InGaN/AlGaN heterostructure laser materials.",
author = "Khan, {F. A.} and L. Zhou and Ping, {A. T.} and I. Adesida",
year = "1999",
language = "English",
volume = "17",
pages = "2750--2754",
journal = "Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena",
issn = "1071-1023",
publisher = "AVS Science and Technology Society",
number = "6",

}

TY - JOUR

T1 - Inductively coupled plasma reactive ion etching of AlxGa1-xN for application in laser facet formation

AU - Khan, F. A.

AU - Zhou, L.

AU - Ping, A. T.

AU - Adesida, I.

PY - 1999

Y1 - 1999

N2 - The etching characteristics of AlxGa1-xN grown by metal-organic chemical-vapor deposition were investigated in an inductively coupled plasma (ICP) reactive ion etching system using Cl2/Ar gas mixtures. Etch rate variations with substrate bias voltage, ICP coil power, chamber pressure, Cl2/Ar gas mixture ratios, and gas flow rates were investigated. The optimum chamber pressure for etching was found to be dependent on both the substrate bias voltage and ICP coil power. Auger electron spectroscopy analysis showed that the stoichiometries of the etched Al0.22Ga0.78N surfaces were identical, independent of the etching conditions. Etching results were successfully applied to form highly anisotropic and smooth facets in GaN/InGaN/AlGaN heterostructure laser materials.

AB - The etching characteristics of AlxGa1-xN grown by metal-organic chemical-vapor deposition were investigated in an inductively coupled plasma (ICP) reactive ion etching system using Cl2/Ar gas mixtures. Etch rate variations with substrate bias voltage, ICP coil power, chamber pressure, Cl2/Ar gas mixture ratios, and gas flow rates were investigated. The optimum chamber pressure for etching was found to be dependent on both the substrate bias voltage and ICP coil power. Auger electron spectroscopy analysis showed that the stoichiometries of the etched Al0.22Ga0.78N surfaces were identical, independent of the etching conditions. Etching results were successfully applied to form highly anisotropic and smooth facets in GaN/InGaN/AlGaN heterostructure laser materials.

UR - http://www.scopus.com/inward/record.url?scp=0033263052&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033263052&partnerID=8YFLogxK

M3 - Article

VL - 17

SP - 2750

EP - 2754

JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

SN - 1071-1023

IS - 6

ER -