Inductively coupled plasma reactive ion etching of ZnO using BCl 3-based plasmas

Han Ki Kim, J. W. Bae, T. K. Kim, K. K. Kim, T. Y. Seong, I. Adesida

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A report on inductively coupled plasma (ICP) reactive ion etching of ZnO using BCl3-based plasmas, was presented. Etch rates were studied as a function of BCl3/Cl2/Ar chemistries, ICP coil power, working pressure and substrate temperature. It was shown that the BCl 3-based etching process produces negligible changes in the surface stoichiometry of ZnO.

Original languageEnglish
Pages (from-to)1273-1277
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number4
Publication statusPublished - Jul 1 2003


ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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