A report on inductively coupled plasma (ICP) reactive ion etching of ZnO using BCl3-based plasmas, was presented. Etch rates were studied as a function of BCl3/Cl2/Ar chemistries, ICP coil power, working pressure and substrate temperature. It was shown that the BCl 3-based etching process produces negligible changes in the surface stoichiometry of ZnO.
|Number of pages||5|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - Jul 1 2003|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering