Influence of intermediate-temperature buffer layer on flicker noise characteristics of MBE-grown GaN thin films and devices

B. H. Leung, W. K. Fong, C. Surya

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Gallium nitride epitaxial layers were grown by rf-plasma MBE on different buffer layer structures. Type I buffer layer consists of a conventional AlN high-temperature buffer layer (HTBL). Type II buffer layer consists of a GaN intermediate-temperature buffer layer (ITBL) grown on top an AlN HTBL. Measurement of flicker noise in metal-semiconductor-metal (MSM) structures on type II buffer layers exhibited close to two orders of magnitude reduction in the noise level compared to those fabricated on type I buffer structures. This shows that GaN thin films grown with the use of ITBL have significantly lower number of interface traps at the metal-semiconductor interface, which is attributed to be the main cause of the observed improvements in the optical properties of the devices. We also performed systematic studies on hot-electron degradation of the devices through the application of a large voltage bias. The data demonstrate substantial improvement in the hot-electron hardness for devices fabricated on type II buffer layer structures.

Original languageEnglish
Pages (from-to)897-900
Number of pages4
JournalApplied Surface Science
Volume212-213
Issue numberSPEC.
DOIs
Publication statusPublished - May 15 2003
Externally publishedYes

Fingerprint

flicker
Buffer layers
Molecular beam epitaxy
buffers
Thin films
thin films
Temperature
temperature
Hot electrons
Metals
hot electrons
Semiconductor materials
metals
Gallium nitride
Epitaxial layers
Bias voltage
gallium nitrides
Buffers
Optical properties
Hardness

Keywords

  • GaN
  • Low-frequency noise
  • Molecular beam epitaxy

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Condensed Matter Physics

Cite this

Influence of intermediate-temperature buffer layer on flicker noise characteristics of MBE-grown GaN thin films and devices. / Leung, B. H.; Fong, W. K.; Surya, C.

In: Applied Surface Science, Vol. 212-213, No. SPEC., 15.05.2003, p. 897-900.

Research output: Contribution to journalArticle

@article{fbd860a6125b475d9787f47f6a8aa2d8,
title = "Influence of intermediate-temperature buffer layer on flicker noise characteristics of MBE-grown GaN thin films and devices",
abstract = "Gallium nitride epitaxial layers were grown by rf-plasma MBE on different buffer layer structures. Type I buffer layer consists of a conventional AlN high-temperature buffer layer (HTBL). Type II buffer layer consists of a GaN intermediate-temperature buffer layer (ITBL) grown on top an AlN HTBL. Measurement of flicker noise in metal-semiconductor-metal (MSM) structures on type II buffer layers exhibited close to two orders of magnitude reduction in the noise level compared to those fabricated on type I buffer structures. This shows that GaN thin films grown with the use of ITBL have significantly lower number of interface traps at the metal-semiconductor interface, which is attributed to be the main cause of the observed improvements in the optical properties of the devices. We also performed systematic studies on hot-electron degradation of the devices through the application of a large voltage bias. The data demonstrate substantial improvement in the hot-electron hardness for devices fabricated on type II buffer layer structures.",
keywords = "GaN, Low-frequency noise, Molecular beam epitaxy",
author = "Leung, {B. H.} and Fong, {W. K.} and C. Surya",
year = "2003",
month = "5",
day = "15",
doi = "10.1016/S0169-4332(03)00023-0",
language = "English",
volume = "212-213",
pages = "897--900",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",
number = "SPEC.",

}

TY - JOUR

T1 - Influence of intermediate-temperature buffer layer on flicker noise characteristics of MBE-grown GaN thin films and devices

AU - Leung, B. H.

AU - Fong, W. K.

AU - Surya, C.

PY - 2003/5/15

Y1 - 2003/5/15

N2 - Gallium nitride epitaxial layers were grown by rf-plasma MBE on different buffer layer structures. Type I buffer layer consists of a conventional AlN high-temperature buffer layer (HTBL). Type II buffer layer consists of a GaN intermediate-temperature buffer layer (ITBL) grown on top an AlN HTBL. Measurement of flicker noise in metal-semiconductor-metal (MSM) structures on type II buffer layers exhibited close to two orders of magnitude reduction in the noise level compared to those fabricated on type I buffer structures. This shows that GaN thin films grown with the use of ITBL have significantly lower number of interface traps at the metal-semiconductor interface, which is attributed to be the main cause of the observed improvements in the optical properties of the devices. We also performed systematic studies on hot-electron degradation of the devices through the application of a large voltage bias. The data demonstrate substantial improvement in the hot-electron hardness for devices fabricated on type II buffer layer structures.

AB - Gallium nitride epitaxial layers were grown by rf-plasma MBE on different buffer layer structures. Type I buffer layer consists of a conventional AlN high-temperature buffer layer (HTBL). Type II buffer layer consists of a GaN intermediate-temperature buffer layer (ITBL) grown on top an AlN HTBL. Measurement of flicker noise in metal-semiconductor-metal (MSM) structures on type II buffer layers exhibited close to two orders of magnitude reduction in the noise level compared to those fabricated on type I buffer structures. This shows that GaN thin films grown with the use of ITBL have significantly lower number of interface traps at the metal-semiconductor interface, which is attributed to be the main cause of the observed improvements in the optical properties of the devices. We also performed systematic studies on hot-electron degradation of the devices through the application of a large voltage bias. The data demonstrate substantial improvement in the hot-electron hardness for devices fabricated on type II buffer layer structures.

KW - GaN

KW - Low-frequency noise

KW - Molecular beam epitaxy

UR - http://www.scopus.com/inward/record.url?scp=0038209602&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0038209602&partnerID=8YFLogxK

U2 - 10.1016/S0169-4332(03)00023-0

DO - 10.1016/S0169-4332(03)00023-0

M3 - Article

VL - 212-213

SP - 897

EP - 900

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

IS - SPEC.

ER -