Influence of intermediate-temperature buffer layer on flicker noise characteristics of MBE-grown GaN thin films and devices

B. H. Leung, W. K. Fong, C. Surya

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Gallium nitride epitaxial layers were grown by rf-plasma MBE on different buffer layer structures. Type I buffer layer consists of a conventional AlN high-temperature buffer layer (HTBL). Type II buffer layer consists of a GaN intermediate-temperature buffer layer (ITBL) grown on top an AlN HTBL. Measurement of flicker noise in metal-semiconductor-metal (MSM) structures on type II buffer layers exhibited close to two orders of magnitude reduction in the noise level compared to those fabricated on type I buffer structures. This shows that GaN thin films grown with the use of ITBL have significantly lower number of interface traps at the metal-semiconductor interface, which is attributed to be the main cause of the observed improvements in the optical properties of the devices. We also performed systematic studies on hot-electron degradation of the devices through the application of a large voltage bias. The data demonstrate substantial improvement in the hot-electron hardness for devices fabricated on type II buffer layer structures.

Original languageEnglish
Pages (from-to)897-900
Number of pages4
JournalApplied Surface Science
Volume212-213
Issue numberSPEC.
DOIs
Publication statusPublished - May 15 2003
Externally publishedYes

Keywords

  • GaN
  • Low-frequency noise
  • Molecular beam epitaxy

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Condensed Matter Physics

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