InGaAs metal-semiconductor-metal photodetectors with a hybrid combination of transparent and opaque electrodes

Walter Wohlmuth, Mohamed Arafa, Patrick Fay, Ilesanmi Adesida

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

A metal-semiconductor-metal photodetector (MSMPD) with a hybrid combination of transparent cadmium-tin-oxide and opaque Ti:Au electrodes is proposed and demonstrated. A significant decrease in dark current is obtained by independently engineering the Schottky barrier heights at the anode and cathode. In addition, the use of transparent electrodes enables more light to be coupled into the front-side illuminated MSMPDs thereby increasing the responsivity. For an applied bias of 5 V, these devices exhibited an extremely low dark current density of 21.2 fA/μm2 and a high responsivity of 0.56 A/W to perpendicularly incident 1.31 μm wavelength light.

Original languageEnglish
Pages (from-to)3026-3028
Number of pages3
JournalApplied Physics Letters
Volume70
Issue number22
Publication statusPublished - Jun 2 1997
Externally publishedYes

Fingerprint

dark current
photometers
electrodes
metals
cadmium
tin oxides
anodes
cathodes
engineering
current density
wavelengths

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

InGaAs metal-semiconductor-metal photodetectors with a hybrid combination of transparent and opaque electrodes. / Wohlmuth, Walter; Arafa, Mohamed; Fay, Patrick; Adesida, Ilesanmi.

In: Applied Physics Letters, Vol. 70, No. 22, 02.06.1997, p. 3026-3028.

Research output: Contribution to journalArticle

@article{265feab3b79a499295b67c7ac7b059c5,
title = "InGaAs metal-semiconductor-metal photodetectors with a hybrid combination of transparent and opaque electrodes",
abstract = "A metal-semiconductor-metal photodetector (MSMPD) with a hybrid combination of transparent cadmium-tin-oxide and opaque Ti:Au electrodes is proposed and demonstrated. A significant decrease in dark current is obtained by independently engineering the Schottky barrier heights at the anode and cathode. In addition, the use of transparent electrodes enables more light to be coupled into the front-side illuminated MSMPDs thereby increasing the responsivity. For an applied bias of 5 V, these devices exhibited an extremely low dark current density of 21.2 fA/μm2 and a high responsivity of 0.56 A/W to perpendicularly incident 1.31 μm wavelength light.",
author = "Walter Wohlmuth and Mohamed Arafa and Patrick Fay and Ilesanmi Adesida",
year = "1997",
month = "6",
day = "2",
language = "English",
volume = "70",
pages = "3026--3028",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "22",

}

TY - JOUR

T1 - InGaAs metal-semiconductor-metal photodetectors with a hybrid combination of transparent and opaque electrodes

AU - Wohlmuth, Walter

AU - Arafa, Mohamed

AU - Fay, Patrick

AU - Adesida, Ilesanmi

PY - 1997/6/2

Y1 - 1997/6/2

N2 - A metal-semiconductor-metal photodetector (MSMPD) with a hybrid combination of transparent cadmium-tin-oxide and opaque Ti:Au electrodes is proposed and demonstrated. A significant decrease in dark current is obtained by independently engineering the Schottky barrier heights at the anode and cathode. In addition, the use of transparent electrodes enables more light to be coupled into the front-side illuminated MSMPDs thereby increasing the responsivity. For an applied bias of 5 V, these devices exhibited an extremely low dark current density of 21.2 fA/μm2 and a high responsivity of 0.56 A/W to perpendicularly incident 1.31 μm wavelength light.

AB - A metal-semiconductor-metal photodetector (MSMPD) with a hybrid combination of transparent cadmium-tin-oxide and opaque Ti:Au electrodes is proposed and demonstrated. A significant decrease in dark current is obtained by independently engineering the Schottky barrier heights at the anode and cathode. In addition, the use of transparent electrodes enables more light to be coupled into the front-side illuminated MSMPDs thereby increasing the responsivity. For an applied bias of 5 V, these devices exhibited an extremely low dark current density of 21.2 fA/μm2 and a high responsivity of 0.56 A/W to perpendicularly incident 1.31 μm wavelength light.

UR - http://www.scopus.com/inward/record.url?scp=0004583968&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0004583968&partnerID=8YFLogxK

M3 - Article

VL - 70

SP - 3026

EP - 3028

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 22

ER -