InGaAsP-InP ridge-waveguide DBR lasers with first-order surface gratings fabricated using CAIBE

R. M. Lammert, A. M. Jones, C. T. Youtsey, J. S. Hughes, S. D. Roh, I. Adesida, J. J. Coleman

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14 Citations (Scopus)

Abstract

The design and operation of InGaAsP-InP ridge-waveguide (RW) distributed Bragg reflector (DBR) multiple quantum-well lasers with first-order surface gratings are presented. The RW DBR lasers are fabricated using only a single growth step without growth on a corrugated surface. Uncoated devices with grating etch depths of 0.6 and 0.5-μm exhibit pulsed threshold currents of 32 and 43 mA with slope efficiencies of 0.34 and 0.24 W/A, respectively. The device with a grating etch depth of 0.5-μm operates on a single longitudinal mode with about 40-dB side-mode suppression. All these results are from devices with Bragg condition wavelengths which are red-shifted from the peak spontaneous emission wavelength by over 400 Å.

Original languageEnglish
Pages (from-to)1445-1447
Number of pages3
JournalIEEE Photonics Technology Letters
Volume9
Issue number11
DOIs
Publication statusPublished - Nov 1 1997

Keywords

  • Distributed Bragg reflector lasers
  • Gratings
  • Quantum-well lasers
  • Semiconductor lasers
  • Strain

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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    Lammert, R. M., Jones, A. M., Youtsey, C. T., Hughes, J. S., Roh, S. D., Adesida, I., & Coleman, J. J. (1997). InGaAsP-InP ridge-waveguide DBR lasers with first-order surface gratings fabricated using CAIBE. IEEE Photonics Technology Letters, 9(11), 1445-1447. https://doi.org/10.1109/68.634703