Inherent photoluminescence Stokes shift in GaAs

Bruno Ullrich, Akhilesh K. Singh, Puspendu Barik, Haowen Xi, Mithun Bhowmick

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


The intrinsic photoluminescence Stokes shift, i.e., the energy difference between optical band gap and emission peak, of 350 μm thick semi-insulating GaAs wafers is found to be 4 meV at room temperature. The result is based on the determination of the optical bulk band gap from the transmission trend via modified Urbach rule whose result is confirmed with the transmission derivative method. The findings reveal the detailed balance of the optically evoked transitions and disclose the intrinsic link between Stokes shift and the Urbach tail slope parameter.

Original languageEnglish
Pages (from-to)2580-2583
Number of pages4
JournalOptics Letters
Issue number11
Publication statusPublished - Jun 1 2015
Externally publishedYes

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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