Inhomogeneity in the fabrication of InGaAs/GaAs quantum wire arrays by selective-area metalorganic chemical vapor deposition

R. Panepucci, M. L. Osowski, D. A. Turnbull, S. Q. Gu, S. G. Bishop, J. J. Coleman, I. Adesida

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

We present the fabrication and experimental characterization of finite-area selectively-grown InGaAs/GaAs metalorganic chemical vapor deposition (MOCVD) quantum well wire (QWR) arrays. The wire patterns studied were obtained by high resolution electron beam lithography using PMMA and etching of SiO2. Growth was performed by atmospheric pressure MOCVD in a vertical reactor configuration. We observed a large non-linear enhancement of growth inside the wire region. The inhomogeneity of fabricated QWR arrays was studied by spatially resolved photoluminescence.

Original languageEnglish
Pages (from-to)111-116
Number of pages6
JournalSuperlattices and Microstructures
Volume20
Issue number1
DOIs
Publication statusPublished - Jun 1996

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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