Instabilities and chaos in optically injected semiconductor lasers

V. Kovanis, A. Gavrielides, T. B. Simpson, J. M. Liu

Research output: Contribution to journalArticle

110 Citations (Scopus)

Abstract

Systematic experimental measurements and theoretical calculations based on a single mode rate equation model are combined to study the dynamics of a semiconductor laser subject to strong external optical injection. Regions of detuned injection are explored, concentrating on the strong injection regime. Two distinct islands of chaos are observed inside the injection locking region. The rate equations successfully reproduce the experimentally observed dynamical phenomena.

Original languageEnglish
Pages (from-to)2780-2782
Number of pages3
JournalApplied Physics Letters
Volume67
Issue number19
DOIs
Publication statusPublished - Nov 6 1995
Externally publishedYes

Fingerprint

chaos
semiconductor lasers
injection
injection locking
concentrating

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Kovanis, V., Gavrielides, A., Simpson, T. B., & Liu, J. M. (1995). Instabilities and chaos in optically injected semiconductor lasers. Applied Physics Letters, 67(19), 2780-2782. https://doi.org/10.1063/1.114591

Instabilities and chaos in optically injected semiconductor lasers. / Kovanis, V.; Gavrielides, A.; Simpson, T. B.; Liu, J. M.

In: Applied Physics Letters, Vol. 67, No. 19, 06.11.1995, p. 2780-2782.

Research output: Contribution to journalArticle

Kovanis, V, Gavrielides, A, Simpson, TB & Liu, JM 1995, 'Instabilities and chaos in optically injected semiconductor lasers', Applied Physics Letters, vol. 67, no. 19, pp. 2780-2782. https://doi.org/10.1063/1.114591
Kovanis, V. ; Gavrielides, A. ; Simpson, T. B. ; Liu, J. M. / Instabilities and chaos in optically injected semiconductor lasers. In: Applied Physics Letters. 1995 ; Vol. 67, No. 19. pp. 2780-2782.
@article{d6f6911152584879bbce5426e9392849,
title = "Instabilities and chaos in optically injected semiconductor lasers",
abstract = "Systematic experimental measurements and theoretical calculations based on a single mode rate equation model are combined to study the dynamics of a semiconductor laser subject to strong external optical injection. Regions of detuned injection are explored, concentrating on the strong injection regime. Two distinct islands of chaos are observed inside the injection locking region. The rate equations successfully reproduce the experimentally observed dynamical phenomena.",
author = "V. Kovanis and A. Gavrielides and Simpson, {T. B.} and Liu, {J. M.}",
year = "1995",
month = "11",
day = "6",
doi = "10.1063/1.114591",
language = "English",
volume = "67",
pages = "2780--2782",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "19",

}

TY - JOUR

T1 - Instabilities and chaos in optically injected semiconductor lasers

AU - Kovanis, V.

AU - Gavrielides, A.

AU - Simpson, T. B.

AU - Liu, J. M.

PY - 1995/11/6

Y1 - 1995/11/6

N2 - Systematic experimental measurements and theoretical calculations based on a single mode rate equation model are combined to study the dynamics of a semiconductor laser subject to strong external optical injection. Regions of detuned injection are explored, concentrating on the strong injection regime. Two distinct islands of chaos are observed inside the injection locking region. The rate equations successfully reproduce the experimentally observed dynamical phenomena.

AB - Systematic experimental measurements and theoretical calculations based on a single mode rate equation model are combined to study the dynamics of a semiconductor laser subject to strong external optical injection. Regions of detuned injection are explored, concentrating on the strong injection regime. Two distinct islands of chaos are observed inside the injection locking region. The rate equations successfully reproduce the experimentally observed dynamical phenomena.

UR - http://www.scopus.com/inward/record.url?scp=0029638093&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029638093&partnerID=8YFLogxK

U2 - 10.1063/1.114591

DO - 10.1063/1.114591

M3 - Article

AN - SCOPUS:0029638093

VL - 67

SP - 2780

EP - 2782

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 19

ER -