Integration of InAlAs/InGaAs/InP enhancement-and depletion-mode high electron mobility transistors for high-speed circuit applications

A. Mahajan, P. Fay, M. Arafa, I. Adesida

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)

Abstract

A process for the monolithic integration of enhancement-and depletion-mode high electron mobility transistors (E/D-HEMT's) on InAlAs/InGaAs/InP is reported. The E-HEMT's with a 1.0-μm gate length exhibit a threshold voltage of +255 mV and a maximum dc extrinsic transconductance of 503 mS/mni at room temperature, while a threshold voltage of -317 mV and a transconductance of 390 mS/mni are measured for the D-HEMT's of the same gate length. The devices show excellent RF performance, with a unity current-gain cutoff frequency (ft) of 35 GHz and a maximum frequency of oscillation (fmax) of 95 GHz for both the E- and D-HEMT's. To the best of the authors' knowledge, this is the first demonstration of an E/D-HEMT technology on lattice-matched InP that is suitable for circuit integration.

Original languageEnglish
Pages (from-to)338-340
Number of pages3
JournalIEEE Transactions on Electron Devices
Volume45
Issue number1
DOIs
Publication statusPublished - Dec 1 1998

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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