Abstract
The optical gain spectra for interdiffused GaxIn1-xN0.04 As0.96/ GaAs single quantum wells are studied theoretically using the Fick's Law and Fermi Golden Rule. Due to quantum well interdiffusion, the peak gain and the shift of the gain peaks vary with the diffusion lengths. Our results show that interdiffusion technique can be used to tune the operating wavelength for multi-wavelength applications without degradation of device performance.
| Original language | English |
|---|---|
| Pages | 17-20 |
| Number of pages | 4 |
| Publication status | Published - Jan 1 2001 |
| Externally published | Yes |
| Event | 2001 IEEE Hong Kong Electron Devices Meeting - Hong Kong, China Duration: Jun 30 2001 → … |
Conference
| Conference | 2001 IEEE Hong Kong Electron Devices Meeting |
|---|---|
| Country | China |
| City | Hong Kong |
| Period | 6/30/01 → … |
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Keywords
- GaInNAs/GaAs
- Interdiffusion
- Laser
- Optical gain
- Quantum well
- Semiconductor
ASJC Scopus subject areas
- Engineering(all)
Cite this
Chan, M. C. Y., Surya, C., & Wai, P. K. A. (2001). Interdiffusion of GaInNAs/GaAs quantum wells. 17-20. Paper presented at 2001 IEEE Hong Kong Electron Devices Meeting, Hong Kong, China.