Interdiffusion of GaInNAs/GaAs quantum wells

M. C Y Chan, C. Surya, P. K A Wai

Research output: Contribution to conferencePaperpeer-review

Abstract

The optical gain spectra for interdiffused GaxIn1-xN0.04 As0.96/ GaAs single quantum wells are studied theoretically using the Fick's Law and Fermi Golden Rule. Due to quantum well interdiffusion, the peak gain and the shift of the gain peaks vary with the diffusion lengths. Our results show that interdiffusion technique can be used to tune the operating wavelength for multi-wavelength applications without degradation of device performance.

Original languageEnglish
Pages17-20
Number of pages4
Publication statusPublished - Jan 1 2001
Externally publishedYes
Event2001 IEEE Hong Kong Electron Devices Meeting - Hong Kong, China
Duration: Jun 30 2001 → …

Conference

Conference2001 IEEE Hong Kong Electron Devices Meeting
CountryChina
CityHong Kong
Period6/30/01 → …

Keywords

  • GaInNAs/GaAs
  • Interdiffusion
  • Laser
  • Optical gain
  • Quantum well
  • Semiconductor

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'Interdiffusion of GaInNAs/GaAs quantum wells'. Together they form a unique fingerprint.

Cite this