Interdiffusion of GaInNAs/GaAs quantum wells

M. C Y Chan; C. Surya; P. K A Wai

Interdiffusion of GaInNAs/GaAs quantum wells

M. C Y Chan, C. Surya, P. K A Wai

Research output: Contribution to conference › Paper › peer-review

Abstract

The optical gain spectra for interdiffused Ga_xIn_1-xN_0.04 As_0.96/ GaAs single quantum wells are studied theoretically using the Fick's Law and Fermi Golden Rule. Due to quantum well interdiffusion, the peak gain and the shift of the gain peaks vary with the diffusion lengths. Our results show that interdiffusion technique can be used to tune the operating wavelength for multi-wavelength applications without degradation of device performance.

Original language	English
Pages	17-20
Number of pages	4
Publication status	Published - Jan 1 2001
Externally published	Yes
Event	2001 IEEE Hong Kong Electron Devices Meeting - Hong Kong, China Duration: Jun 30 2001 → …

Conference

Conference	2001 IEEE Hong Kong Electron Devices Meeting
Country	China
City	Hong Kong
Period	6/30/01 → …

Keywords

GaInNAs/GaAs
Interdiffusion
Laser
Optical gain
Quantum well
Semiconductor

ASJC Scopus subject areas

Engineering(all)

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@conference{d58ca3dd886b452f81c0fdf6aca33067,

title = "Interdiffusion of GaInNAs/GaAs quantum wells",

abstract = "The optical gain spectra for interdiffused GaxIn1-xN0.04 As0.96/ GaAs single quantum wells are studied theoretically using the Fick's Law and Fermi Golden Rule. Due to quantum well interdiffusion, the peak gain and the shift of the gain peaks vary with the diffusion lengths. Our results show that interdiffusion technique can be used to tune the operating wavelength for multi-wavelength applications without degradation of device performance.",

keywords = "GaInNAs/GaAs, Interdiffusion, Laser, Optical gain, Quantum well, Semiconductor",

author = "Chan, {M. C Y} and C. Surya and Wai, {P. K A}",

year = "2001",

month = jan,

day = "1",

language = "English",

pages = "17--20",

note = "2001 IEEE Hong Kong Electron Devices Meeting ; Conference date: 30-06-2001",

}

TY - CONF

T1 - Interdiffusion of GaInNAs/GaAs quantum wells

AU - Chan, M. C Y

AU - Surya, C.

AU - Wai, P. K A

PY - 2001/1/1

Y1 - 2001/1/1

N2 - The optical gain spectra for interdiffused GaxIn1-xN0.04 As0.96/ GaAs single quantum wells are studied theoretically using the Fick's Law and Fermi Golden Rule. Due to quantum well interdiffusion, the peak gain and the shift of the gain peaks vary with the diffusion lengths. Our results show that interdiffusion technique can be used to tune the operating wavelength for multi-wavelength applications without degradation of device performance.

AB - The optical gain spectra for interdiffused GaxIn1-xN0.04 As0.96/ GaAs single quantum wells are studied theoretically using the Fick's Law and Fermi Golden Rule. Due to quantum well interdiffusion, the peak gain and the shift of the gain peaks vary with the diffusion lengths. Our results show that interdiffusion technique can be used to tune the operating wavelength for multi-wavelength applications without degradation of device performance.

KW - GaInNAs/GaAs

KW - Interdiffusion

KW - Laser

KW - Optical gain

KW - Quantum well

KW - Semiconductor

UR - http://www.scopus.com/inward/record.url?scp=0034829379&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034829379&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0034829379

SP - 17

EP - 20

T2 - 2001 IEEE Hong Kong Electron Devices Meeting

Y2 - 30 June 2001

ER -