Intrinsic photoluminescence Stokes shift in semiconductors demonstrated by thin-film CdS formed with pulsed-laser deposition

Bruno Ullrich, D. Ariza-Flores, Mithun Bhowmick

Research output: Contribution to journalArticle

19 Citations (Scopus)


While not reported in the literature, by employing highly oriented, semi-insulating, thin-film CdS as test material, we present the observation of the intrinsic photoluminescence Stokes shift in a semiconductor. Analysis of Raman peaks, transmission, reflection, and photoluminescence shows that during band-to-band emission at room temperature one-to-two longitudinal optical phonons with energy of 39.8 meV are emitted. The result is confirmed by the theoretically expected Huang-Rhys factor.

Original languageEnglish
Pages (from-to)24-26
Number of pages3
JournalThin Solid Films
Publication statusPublished - May 2 2014
Externally publishedYes



  • Band gap
  • Huang-Rhys factor
  • Phonons
  • Pulsed-laser deposition
  • Raman spectroscopy
  • Stokes shift
  • Thin-film CdS

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

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