Investigation of low-frequency noise in van der Waals epitaxies

S. F. Wang, W. K. Fong, C. Surya

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We report the growth of high quality SnS van der Waals epitaxies (vdWEs) on mica by molecular beam epitaxy (MBE). Record low rocking curve FWHM for the SnS (001) and SnSe (001) eplayers were observed. Detailed investigations of the film morphology indicate layer-by-Iayer growth mode expected for 2D layered structure. The characteristic structural symmetry of the mica surface leads to the nucleation of crystallites with different lateral orientations. This results in high concentration of grain boundaries and high level of low-frequency excess noise. We investigated the growth mechanisms of the vdWEs and suggested a novel growth technique in which a SnSe buffer layer is utilized to reduce the concentration of the grain boundary. The idea is tested experimentally and significant reduction in the low-frequency noise is observed suggesting the use of the buffer layer had resulted in the reduction in the possible growth orientations of the top SnS epilayer and thereby reducing the grain boundary concentration.

Original languageEnglish
Title of host publication2013 22nd International Conference on Noise and Fluctuations, ICNF 2013
DOIs
Publication statusPublished - Sep 16 2013
Externally publishedYes
Event2013 22nd International Conference on Noise and Fluctuations, ICNF 2013 - Montpellier, France
Duration: Jun 24 2013Jun 28 2013

Conference

Conference2013 22nd International Conference on Noise and Fluctuations, ICNF 2013
CountryFrance
CityMontpellier
Period6/24/136/28/13

Fingerprint

low frequencies
grain boundaries
mica
buffers
crystallites
molecular beam epitaxy
nucleation
symmetry
curves

Keywords

  • low-frequency excess noise
  • molecular beam epitaxy
  • SnS
  • SnSe buffer layer
  • van der Waals epitaxy

ASJC Scopus subject areas

  • Acoustics and Ultrasonics

Cite this

Wang, S. F., Fong, W. K., & Surya, C. (2013). Investigation of low-frequency noise in van der Waals epitaxies. In 2013 22nd International Conference on Noise and Fluctuations, ICNF 2013 [6579007] https://doi.org/10.1109/ICNF.2013.6579007

Investigation of low-frequency noise in van der Waals epitaxies. / Wang, S. F.; Fong, W. K.; Surya, C.

2013 22nd International Conference on Noise and Fluctuations, ICNF 2013. 2013. 6579007.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Wang, SF, Fong, WK & Surya, C 2013, Investigation of low-frequency noise in van der Waals epitaxies. in 2013 22nd International Conference on Noise and Fluctuations, ICNF 2013., 6579007, 2013 22nd International Conference on Noise and Fluctuations, ICNF 2013, Montpellier, France, 6/24/13. https://doi.org/10.1109/ICNF.2013.6579007
Wang SF, Fong WK, Surya C. Investigation of low-frequency noise in van der Waals epitaxies. In 2013 22nd International Conference on Noise and Fluctuations, ICNF 2013. 2013. 6579007 https://doi.org/10.1109/ICNF.2013.6579007
Wang, S. F. ; Fong, W. K. ; Surya, C. / Investigation of low-frequency noise in van der Waals epitaxies. 2013 22nd International Conference on Noise and Fluctuations, ICNF 2013. 2013.
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