Investigation of surface treatment schemes on n-type GaN and Al 0.20 Ga 0.80 N

Deepak Selvanathan, Fitih M. Mohammed, Jeong Oun Bae, Ilesanmi Adesida, Katherine H A Bogart

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

The effects of Si Cl4 reactive-ion-etching (RIE) plasma treatment on n-GaN and n- Al0.20 Ga0.80 N surfaces, and the subsequent cleaning of the surfaces using ammonium hydroxide (N H4 OH), hydrochloric acid (HCl), and buffered oxide etch (BOE) solutions, have been investigated using x-ray photoelectron spectroscopy and Auger electron spectroscopy measurements. Of these cleaning schemes, BOE was found to be the most effective treatment to remove oxides from the surfaces of the Si Cl4 plasma treated samples. The Si Cl4 plasma treatment of GaN and AlGaN resulted in the blueshift of Ga-N (Ga3d) peaks to higher binding energies corresponding to a shift of the Fermi level (EF) toward the conduction band edge at the surface. It has been reported that this type of shift is caused by the creation of N vacancies, which act as n -type dopant [D. W. Jenkins and J. D. Dow, Phys. Rev. B. 39, 3317 (1989); M. E. Lin, Z. F. Fan, Z. Ma, L. H. Allen, and H. Morko̧, Appl. Phys. Lett. 64, 887 (1994); A. T. Ping, Q. Chen, J. W. Yang, M. A. Khan, and I. Adesida, J. Electron. Mater. 27, 261 (1998)] on the surface due to Si Cl4 plasma treatment. This corresponds to an increase in n -type dopant density on the surface. Thus, Si Cl4 plasma treatment in a RIE system thins the Schottky barrier heights of n-GaN and n-AlGaN and aids in the formation of ohmic contacts on such surfaces.

Original languageEnglish
Pages (from-to)2538-2544
Number of pages7
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume23
Issue number6
DOIs
Publication statusPublished - Nov 2005
Externally publishedYes

Fingerprint

surface treatment
Surface treatment
Plasmas
Reactive ion etching
cleaning
Oxides
oxides
Cleaning
Doping (additives)
Ammonium hydroxide
Ohmic contacts
shift
hydrochloric acid
plasma etching
Auger electron spectroscopy
Hydrochloric acid
Photoelectron spectroscopy
Fermi level
Conduction bands
Binding energy

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

Investigation of surface treatment schemes on n-type GaN and Al 0.20 Ga 0.80 N. / Selvanathan, Deepak; Mohammed, Fitih M.; Bae, Jeong Oun; Adesida, Ilesanmi; Bogart, Katherine H A.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 23, No. 6, 11.2005, p. 2538-2544.

Research output: Contribution to journalArticle

Selvanathan, Deepak ; Mohammed, Fitih M. ; Bae, Jeong Oun ; Adesida, Ilesanmi ; Bogart, Katherine H A. / Investigation of surface treatment schemes on n-type GaN and Al 0.20 Ga 0.80 N. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2005 ; Vol. 23, No. 6. pp. 2538-2544.
@article{e6fbcf4cd2f347b281a1f78b6f00d0b8,
title = "Investigation of surface treatment schemes on n-type GaN and Al 0.20 Ga 0.80 N",
abstract = "The effects of Si Cl4 reactive-ion-etching (RIE) plasma treatment on n-GaN and n- Al0.20 Ga0.80 N surfaces, and the subsequent cleaning of the surfaces using ammonium hydroxide (N H4 OH), hydrochloric acid (HCl), and buffered oxide etch (BOE) solutions, have been investigated using x-ray photoelectron spectroscopy and Auger electron spectroscopy measurements. Of these cleaning schemes, BOE was found to be the most effective treatment to remove oxides from the surfaces of the Si Cl4 plasma treated samples. The Si Cl4 plasma treatment of GaN and AlGaN resulted in the blueshift of Ga-N (Ga3d) peaks to higher binding energies corresponding to a shift of the Fermi level (EF) toward the conduction band edge at the surface. It has been reported that this type of shift is caused by the creation of N vacancies, which act as n -type dopant [D. W. Jenkins and J. D. Dow, Phys. Rev. B. 39, 3317 (1989); M. E. Lin, Z. F. Fan, Z. Ma, L. H. Allen, and H. Morko̧, Appl. Phys. Lett. 64, 887 (1994); A. T. Ping, Q. Chen, J. W. Yang, M. A. Khan, and I. Adesida, J. Electron. Mater. 27, 261 (1998)] on the surface due to Si Cl4 plasma treatment. This corresponds to an increase in n -type dopant density on the surface. Thus, Si Cl4 plasma treatment in a RIE system thins the Schottky barrier heights of n-GaN and n-AlGaN and aids in the formation of ohmic contacts on such surfaces.",
author = "Deepak Selvanathan and Mohammed, {Fitih M.} and Bae, {Jeong Oun} and Ilesanmi Adesida and Bogart, {Katherine H A}",
year = "2005",
month = "11",
doi = "10.1116/1.2131078",
language = "English",
volume = "23",
pages = "2538--2544",
journal = "Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena",
issn = "1071-1023",
publisher = "AVS Science and Technology Society",
number = "6",

}

TY - JOUR

T1 - Investigation of surface treatment schemes on n-type GaN and Al 0.20 Ga 0.80 N

AU - Selvanathan, Deepak

AU - Mohammed, Fitih M.

AU - Bae, Jeong Oun

AU - Adesida, Ilesanmi

AU - Bogart, Katherine H A

PY - 2005/11

Y1 - 2005/11

N2 - The effects of Si Cl4 reactive-ion-etching (RIE) plasma treatment on n-GaN and n- Al0.20 Ga0.80 N surfaces, and the subsequent cleaning of the surfaces using ammonium hydroxide (N H4 OH), hydrochloric acid (HCl), and buffered oxide etch (BOE) solutions, have been investigated using x-ray photoelectron spectroscopy and Auger electron spectroscopy measurements. Of these cleaning schemes, BOE was found to be the most effective treatment to remove oxides from the surfaces of the Si Cl4 plasma treated samples. The Si Cl4 plasma treatment of GaN and AlGaN resulted in the blueshift of Ga-N (Ga3d) peaks to higher binding energies corresponding to a shift of the Fermi level (EF) toward the conduction band edge at the surface. It has been reported that this type of shift is caused by the creation of N vacancies, which act as n -type dopant [D. W. Jenkins and J. D. Dow, Phys. Rev. B. 39, 3317 (1989); M. E. Lin, Z. F. Fan, Z. Ma, L. H. Allen, and H. Morko̧, Appl. Phys. Lett. 64, 887 (1994); A. T. Ping, Q. Chen, J. W. Yang, M. A. Khan, and I. Adesida, J. Electron. Mater. 27, 261 (1998)] on the surface due to Si Cl4 plasma treatment. This corresponds to an increase in n -type dopant density on the surface. Thus, Si Cl4 plasma treatment in a RIE system thins the Schottky barrier heights of n-GaN and n-AlGaN and aids in the formation of ohmic contacts on such surfaces.

AB - The effects of Si Cl4 reactive-ion-etching (RIE) plasma treatment on n-GaN and n- Al0.20 Ga0.80 N surfaces, and the subsequent cleaning of the surfaces using ammonium hydroxide (N H4 OH), hydrochloric acid (HCl), and buffered oxide etch (BOE) solutions, have been investigated using x-ray photoelectron spectroscopy and Auger electron spectroscopy measurements. Of these cleaning schemes, BOE was found to be the most effective treatment to remove oxides from the surfaces of the Si Cl4 plasma treated samples. The Si Cl4 plasma treatment of GaN and AlGaN resulted in the blueshift of Ga-N (Ga3d) peaks to higher binding energies corresponding to a shift of the Fermi level (EF) toward the conduction band edge at the surface. It has been reported that this type of shift is caused by the creation of N vacancies, which act as n -type dopant [D. W. Jenkins and J. D. Dow, Phys. Rev. B. 39, 3317 (1989); M. E. Lin, Z. F. Fan, Z. Ma, L. H. Allen, and H. Morko̧, Appl. Phys. Lett. 64, 887 (1994); A. T. Ping, Q. Chen, J. W. Yang, M. A. Khan, and I. Adesida, J. Electron. Mater. 27, 261 (1998)] on the surface due to Si Cl4 plasma treatment. This corresponds to an increase in n -type dopant density on the surface. Thus, Si Cl4 plasma treatment in a RIE system thins the Schottky barrier heights of n-GaN and n-AlGaN and aids in the formation of ohmic contacts on such surfaces.

UR - http://www.scopus.com/inward/record.url?scp=29044433209&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=29044433209&partnerID=8YFLogxK

U2 - 10.1116/1.2131078

DO - 10.1116/1.2131078

M3 - Article

VL - 23

SP - 2538

EP - 2544

JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

SN - 1071-1023

IS - 6

ER -