Investigation of the radiation resistance of nitride ceramics during irradiation with low-energy

A. Kozlovskiy, T. Gladkikh, K. Dukenbayev, M. Zdorovets

Research output: Contribution to journalArticle

Abstract

The paper presents the results of a study of the radiation resistance of ceramic materials based on aluminum nitride. The irradiation was carried out by C2+ ions with an energy of 40 keV with a fluence from 1014 to 1015 ion cm-2. It is established that as a result of irradiation of the near-surface layer, formation of an impurity phase of Al4C3 is observed, which leads to an increase in parameters of the crystal lattice, which indicates the implantation of C2+ ions and the formation of the implantation phase in the structure. In this case, an increase in contributions of the impurity phases leads to a decrease in the intensity of diffraction peaks, as well as their asymmetry, which is caused by an increase in microstresses and deformations in the lattice. The decrease in hardness and strength characteristics can be explained by the formation of regions of structure disorder in the near-surface layer, as well as the increase in material porosity due to the change in density.

LanguageEnglish
Article number016416
JournalMaterials Research Express
Volume6
Issue number1
DOIs
Publication statusPublished - Jan 1 2019

Fingerprint

Nitrides
Irradiation
Ions
Radiation
Ion implantation
Impurities
Aluminum nitride
Ceramic materials
Crystal lattices
Density (specific gravity)
Porosity
Diffraction
Hardness
aluminum nitride

Keywords

  • ceramic materials
  • crystal surface
  • hillocks
  • ions
  • radiation defects

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Surfaces, Coatings and Films
  • Polymers and Plastics
  • Metals and Alloys

Cite this

Investigation of the radiation resistance of nitride ceramics during irradiation with low-energy. / Kozlovskiy, A.; Gladkikh, T.; Dukenbayev, K.; Zdorovets, M.

In: Materials Research Express, Vol. 6, No. 1, 016416, 01.01.2019.

Research output: Contribution to journalArticle

@article{f2de8840a3664598b0d40e7a653b5ceb,
title = "Investigation of the radiation resistance of nitride ceramics during irradiation with low-energy",
abstract = "The paper presents the results of a study of the radiation resistance of ceramic materials based on aluminum nitride. The irradiation was carried out by C2+ ions with an energy of 40 keV with a fluence from 1014 to 1015 ion cm-2. It is established that as a result of irradiation of the near-surface layer, formation of an impurity phase of Al4C3 is observed, which leads to an increase in parameters of the crystal lattice, which indicates the implantation of C2+ ions and the formation of the implantation phase in the structure. In this case, an increase in contributions of the impurity phases leads to a decrease in the intensity of diffraction peaks, as well as their asymmetry, which is caused by an increase in microstresses and deformations in the lattice. The decrease in hardness and strength characteristics can be explained by the formation of regions of structure disorder in the near-surface layer, as well as the increase in material porosity due to the change in density.",
keywords = "ceramic materials, crystal surface, hillocks, ions, radiation defects",
author = "A. Kozlovskiy and T. Gladkikh and K. Dukenbayev and M. Zdorovets",
year = "2019",
month = "1",
day = "1",
doi = "10.1088/2053-1591/aae6b0",
language = "English",
volume = "6",
journal = "Materials Research Express",
issn = "2053-1591",
publisher = "IOP Publishing Ltd.",
number = "1",

}

TY - JOUR

T1 - Investigation of the radiation resistance of nitride ceramics during irradiation with low-energy

AU - Kozlovskiy, A.

AU - Gladkikh, T.

AU - Dukenbayev, K.

AU - Zdorovets, M.

PY - 2019/1/1

Y1 - 2019/1/1

N2 - The paper presents the results of a study of the radiation resistance of ceramic materials based on aluminum nitride. The irradiation was carried out by C2+ ions with an energy of 40 keV with a fluence from 1014 to 1015 ion cm-2. It is established that as a result of irradiation of the near-surface layer, formation of an impurity phase of Al4C3 is observed, which leads to an increase in parameters of the crystal lattice, which indicates the implantation of C2+ ions and the formation of the implantation phase in the structure. In this case, an increase in contributions of the impurity phases leads to a decrease in the intensity of diffraction peaks, as well as their asymmetry, which is caused by an increase in microstresses and deformations in the lattice. The decrease in hardness and strength characteristics can be explained by the formation of regions of structure disorder in the near-surface layer, as well as the increase in material porosity due to the change in density.

AB - The paper presents the results of a study of the radiation resistance of ceramic materials based on aluminum nitride. The irradiation was carried out by C2+ ions with an energy of 40 keV with a fluence from 1014 to 1015 ion cm-2. It is established that as a result of irradiation of the near-surface layer, formation of an impurity phase of Al4C3 is observed, which leads to an increase in parameters of the crystal lattice, which indicates the implantation of C2+ ions and the formation of the implantation phase in the structure. In this case, an increase in contributions of the impurity phases leads to a decrease in the intensity of diffraction peaks, as well as their asymmetry, which is caused by an increase in microstresses and deformations in the lattice. The decrease in hardness and strength characteristics can be explained by the formation of regions of structure disorder in the near-surface layer, as well as the increase in material porosity due to the change in density.

KW - ceramic materials

KW - crystal surface

KW - hillocks

KW - ions

KW - radiation defects

UR - http://www.scopus.com/inward/record.url?scp=85056103760&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85056103760&partnerID=8YFLogxK

U2 - 10.1088/2053-1591/aae6b0

DO - 10.1088/2053-1591/aae6b0

M3 - Article

VL - 6

JO - Materials Research Express

T2 - Materials Research Express

JF - Materials Research Express

SN - 2053-1591

IS - 1

M1 - 016416

ER -