ION BEAM EXPOSURE PROFILES IN PMMA-COMPUTER SIMULATION.

L. Karapiperis, I. Adesida, C. A. Lee, E. D. Wolf

Research output: Contribution to journalArticle

50 Citations (Scopus)

Abstract

A comprehensive Monte Carlo program (PIBER) was developed for the simulation of ion beam exposure of resists. PIBER has been used to study ion ranges, backscattering coefficients, and energy-loss distribution data for various combinations of incident ions and multilayered targets. For lithographic applications, the spatial ion energy-loss distribution in polymethyl methacrylate (PMMA) generated with PIBER for a delta -function exposure is convoluted with realistic incident ion beam shape (Gaussian, square, etc. ) to produce latent images. A string development model is then used to generate developed ion beam exposure profiles in PMMA. The developed profiles for isolated lines have been studied as a function of parameters such as ion energy, resist thickness, and exposure dosage.

Original languageEnglish
Pages (from-to)1259-1263
Number of pages5
JournalJ VAC SCI TECHNOL
Volume19
Issue number4
DOIs
Publication statusPublished - Nov 1981
Externally publishedYes

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Polymethyl methacrylates
Ion beams
Computer simulation
Ions
Energy dissipation
Delta functions
Backscattering

ASJC Scopus subject areas

  • Engineering(all)

Cite this

ION BEAM EXPOSURE PROFILES IN PMMA-COMPUTER SIMULATION. / Karapiperis, L.; Adesida, I.; Lee, C. A.; Wolf, E. D.

In: J VAC SCI TECHNOL, Vol. 19, No. 4, 11.1981, p. 1259-1263.

Research output: Contribution to journalArticle

Karapiperis, L, Adesida, I, Lee, CA & Wolf, ED 1981, 'ION BEAM EXPOSURE PROFILES IN PMMA-COMPUTER SIMULATION.', J VAC SCI TECHNOL, vol. 19, no. 4, pp. 1259-1263. https://doi.org/10.1116/1.571256
Karapiperis, L. ; Adesida, I. ; Lee, C. A. ; Wolf, E. D. / ION BEAM EXPOSURE PROFILES IN PMMA-COMPUTER SIMULATION. In: J VAC SCI TECHNOL. 1981 ; Vol. 19, No. 4. pp. 1259-1263.
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