A comprehensive Monte Carlo program (PIBER) was developed for the simulation of ion beam exposure of resists. PIBER has been used to study ion ranges, backscattering coefficients, and energy-loss distribution data for various combinations of incident ions and multilayered targets. For lithographic applications, the spatial ion energy-loss distribution in polymethyl methacrylate (PMMA) generated with PIBER for a delta -function exposure is convoluted with realistic incident ion beam shape (Gaussian, square, etc. ) to produce latent images. A string development model is then used to generate developed ion beam exposure profiles in PMMA. The developed profiles for isolated lines have been studied as a function of parameters such as ion energy, resist thickness, and exposure dosage.
|Number of pages||5|
|Journal||Journal of vacuum science & technology|
|Publication status||Published - Jan 1 1981|
|Event||Proc of the Electron, Ion, and Photon Beam Technol, 16th - Dallas, TX, USA|
Duration: May 26 1981 → May 29 1981
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