ION BEAM LITHOGRAPHY AT NANOMETER DIMENSIONS.

I. Adesida, E. Kratschmer, E. D. Wolf, A. Muray, M. Isaacson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

15 Citations (Scopus)

Abstract

Factors affecting the ultimate resolution of ion beam lithography are discussed. These factors are primary ion scattering, recoil atom scattering, range of secondary electrons, and resist properties (i. e. , resist sensitivity and molecule size in the resist). From a consideration of these factors, it is estimated that minimum linewidths of approximately less than 10 nm can be achieved in polymethyl methacrylate (PMMA) using light ions. For heavy ions such as gallium, the resolution limit is estimated to be approximately 30 nm with the limitation being due to recoil atom scattering. Fabrication of high resolution silicon nitride stencil masks is described and replication of the masks with protons in PMMA is demonstrated with features as small as 20 nm.

Original languageEnglish
Title of host publicationJournal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
Pages45-49
Number of pages5
Volume3
Edition1
DOIs
Publication statusPublished - Jan 1 1984
EventProc of the 1984 Int Symp on Electron, Ion, and Photon Beams - Tarrytown, NY, USA
Duration: May 29 1984Jun 1 1984

Other

OtherProc of the 1984 Int Symp on Electron, Ion, and Photon Beams
CityTarrytown, NY, USA
Period5/29/846/1/84

ASJC Scopus subject areas

  • Engineering(all)

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