Abstract
Rutherford backscattering spectrometry and ion channeling were used to determine the relative quantities of wurtzite and zinc-blende phases in metalorganic chemical vapor deposition grown Mg-doped GaN(0001) on an Al2O3(0001) substrate with a GaN buffer layer. Offnormal axial channeling scans were used. High-resolution x-ray diffraction measurements also confirmed the presence of mixed phases. The in-plane orientation was found to be GaN[110]∥GaN[1120]∥Al2O3[1120]. The effects of rapid thermal annealing on the relative phase content, thickness and crystalline quality of the GaN epilayer were also studied.
Original language | English |
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Pages (from-to) | 955-957 |
Number of pages | 3 |
Journal | Journal of Applied Physics |
Volume | 87 |
Issue number | 2 |
DOIs | |
Publication status | Published - Jan 15 2000 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy(all)