Ion channeling studies on mixed phases formed in metalorganic chemical vapor deposition grown Mg-doped GaN on Al2O3(0001)

B. Sundaravel, E. Z. Luo, J. B. Xu, I. H. Wilson, W. K. Fong, L. S. Wang, C. Surya

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

Rutherford backscattering spectrometry and ion channeling were used to determine the relative quantities of wurtzite and zinc-blende phases in metalorganic chemical vapor deposition grown Mg-doped GaN(0001) on an Al2O3(0001) substrate with a GaN buffer layer. Offnormal axial channeling scans were used. High-resolution x-ray diffraction measurements also confirmed the presence of mixed phases. The in-plane orientation was found to be GaN[110]∥GaN[1120]∥Al2O3[1120]. The effects of rapid thermal annealing on the relative phase content, thickness and crystalline quality of the GaN epilayer were also studied.

Original languageEnglish
Pages (from-to)955-957
Number of pages3
JournalJournal of Applied Physics
Volume87
Issue number2
DOIs
Publication statusPublished - Jan 15 2000
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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