Ion channeling studies on mixed phases formed in MOCVD grown Mg-doped GaN on Al2O3 (0001)

B. Sundaravel, E. Z. Luo, J. B. Xu, I. H. Wilson, Patrick Fong, L. S. Wang, Charles Surya

Research output: Contribution to conferencePaper

Abstract

Rutherford backscattering spectrometry (RBS) and channeling is used to determine the presence of wurtzite and zinc-blende phases of MOCVD grown Mg-doped GaN(0001) on Al2O3(0001) substrate with GaN buffer layer from the off-normal axial scans and is complemented with high resolution x-ray diffraction measurements. The in-plane orientation of wurtzite phase is found to be GaN[101̄0]∥Al2O3[101̄0]. Presence of stacking faults and dislocations at different depths are observed in the GaN epilayer. The effects of rapid thermal annealing (RTA) on the phase contents, thickness and crystalline quality of GaN epilayer are also studied.

Original languageEnglish
Pages148-152
Number of pages5
Publication statusPublished - Dec 1 1999
Externally publishedYes
Event1999 IEEE Hong Kong Electron Devices Meeting (HKEDM99) - Shatin, Hong Kong
Duration: Jun 26 1999Jun 26 1999

Conference

Conference1999 IEEE Hong Kong Electron Devices Meeting (HKEDM99)
CityShatin, Hong Kong
Period6/26/996/26/99

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Sundaravel, B., Luo, E. Z., Xu, J. B., Wilson, I. H., Fong, P., Wang, L. S., & Surya, C. (1999). Ion channeling studies on mixed phases formed in MOCVD grown Mg-doped GaN on Al2O3 (0001). 148-152. Paper presented at 1999 IEEE Hong Kong Electron Devices Meeting (HKEDM99), Shatin, Hong Kong, .