Ion channeling studies on mixed phases formed in MOCVD grown Mg-doped GaN on Al2O3 (0001)

B. Sundaravel; E. Z. Luo; J. B. Xu; I. H. Wilson; Patrick Fong; L. S. Wang; Charles Surya

Ion channeling studies on mixed phases formed in MOCVD grown Mg-doped GaN on Al₂O₃ (0001)

B. Sundaravel, E. Z. Luo, J. B. Xu, I. H. Wilson, Patrick Fong, L. S. Wang, Charles Surya

Research output: Contribution to conference › Paper › peer-review

Abstract

Rutherford backscattering spectrometry (RBS) and channeling is used to determine the presence of wurtzite and zinc-blende phases of MOCVD grown Mg-doped GaN(0001) on Al₂O₃(0001) substrate with GaN buffer layer from the off-normal axial scans and is complemented with high resolution x-ray diffraction measurements. The in-plane orientation of wurtzite phase is found to be GaN[101̄0]∥Al₂O₃[101̄0]. Presence of stacking faults and dislocations at different depths are observed in the GaN epilayer. The effects of rapid thermal annealing (RTA) on the phase contents, thickness and crystalline quality of GaN epilayer are also studied.

Original language	English
Pages	148-152
Number of pages	5
Publication status	Published - Dec 1 1999
Externally published	Yes
Event	1999 IEEE Hong Kong Electron Devices Meeting (HKEDM99) - Shatin, Hong Kong Duration: Jun 26 1999 → Jun 26 1999

Conference

Conference	1999 IEEE Hong Kong Electron Devices Meeting (HKEDM99)
City	Shatin, Hong Kong
Period	6/26/99 → 6/26/99

ASJC Scopus subject areas

Engineering(all)

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@conference{cf323c8c3af14698804c6a6f497e013b,

title = "Ion channeling studies on mixed phases formed in MOCVD grown Mg-doped GaN on Al2O3 (0001)",

abstract = "Rutherford backscattering spectrometry (RBS) and channeling is used to determine the presence of wurtzite and zinc-blende phases of MOCVD grown Mg-doped GaN(0001) on Al2O3(0001) substrate with GaN buffer layer from the off-normal axial scans and is complemented with high resolution x-ray diffraction measurements. The in-plane orientation of wurtzite phase is found to be GaN[10{\=1}0]∥Al2O3[10{\=1}0]. Presence of stacking faults and dislocations at different depths are observed in the GaN epilayer. The effects of rapid thermal annealing (RTA) on the phase contents, thickness and crystalline quality of GaN epilayer are also studied.",

author = "B. Sundaravel and Luo, {E. Z.} and Xu, {J. B.} and Wilson, {I. H.} and Patrick Fong and Wang, {L. S.} and Charles Surya",

year = "1999",

month = dec,

day = "1",

language = "English",

pages = "148--152",

note = "1999 IEEE Hong Kong Electron Devices Meeting (HKEDM99) ; Conference date: 26-06-1999 Through 26-06-1999",

}

TY - CONF

T1 - Ion channeling studies on mixed phases formed in MOCVD grown Mg-doped GaN on Al2O3 (0001)

AU - Sundaravel, B.

AU - Luo, E. Z.

AU - Xu, J. B.

AU - Wilson, I. H.

AU - Fong, Patrick

AU - Wang, L. S.

AU - Surya, Charles

PY - 1999/12/1

Y1 - 1999/12/1

N2 - Rutherford backscattering spectrometry (RBS) and channeling is used to determine the presence of wurtzite and zinc-blende phases of MOCVD grown Mg-doped GaN(0001) on Al2O3(0001) substrate with GaN buffer layer from the off-normal axial scans and is complemented with high resolution x-ray diffraction measurements. The in-plane orientation of wurtzite phase is found to be GaN[101̄0]∥Al2O3[101̄0]. Presence of stacking faults and dislocations at different depths are observed in the GaN epilayer. The effects of rapid thermal annealing (RTA) on the phase contents, thickness and crystalline quality of GaN epilayer are also studied.

AB - Rutherford backscattering spectrometry (RBS) and channeling is used to determine the presence of wurtzite and zinc-blende phases of MOCVD grown Mg-doped GaN(0001) on Al2O3(0001) substrate with GaN buffer layer from the off-normal axial scans and is complemented with high resolution x-ray diffraction measurements. The in-plane orientation of wurtzite phase is found to be GaN[101̄0]∥Al2O3[101̄0]. Presence of stacking faults and dislocations at different depths are observed in the GaN epilayer. The effects of rapid thermal annealing (RTA) on the phase contents, thickness and crystalline quality of GaN epilayer are also studied.

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SP - 148

EP - 152

T2 - 1999 IEEE Hong Kong Electron Devices Meeting (HKEDM99)

Y2 - 26 June 1999 through 26 June 1999