Ion channeling studies on mixed phases formed in MOCVD grown Mg-doped GaN on Al2O3 (0001)

B. Sundaravel, E. Z. Luo, J. B. Xu, I. H. Wilson, Patrick Fong, L. S. Wang, Charles Surya

Research output: Contribution to conferencePaper

Abstract

Rutherford backscattering spectrometry (RBS) and channeling is used to determine the presence of wurtzite and zinc-blende phases of MOCVD grown Mg-doped GaN(0001) on Al2O3(0001) substrate with GaN buffer layer from the off-normal axial scans and is complemented with high resolution x-ray diffraction measurements. The in-plane orientation of wurtzite phase is found to be GaN[101̄0]∥Al2O3[101̄0]. Presence of stacking faults and dislocations at different depths are observed in the GaN epilayer. The effects of rapid thermal annealing (RTA) on the phase contents, thickness and crystalline quality of GaN epilayer are also studied.

Original languageEnglish
Pages148-152
Number of pages5
Publication statusPublished - Dec 1 1999
Externally publishedYes
Event1999 IEEE Hong Kong Electron Devices Meeting (HKEDM99) - Shatin, Hong Kong
Duration: Jun 26 1999Jun 26 1999

Conference

Conference1999 IEEE Hong Kong Electron Devices Meeting (HKEDM99)
CityShatin, Hong Kong
Period6/26/996/26/99

Fingerprint

Epilayers
Metallorganic chemical vapor deposition
Rapid thermal annealing
Stacking faults
Ions
Rutherford backscattering spectroscopy
Buffer layers
Dislocations (crystals)
Spectrometry
Zinc
Diffraction
Crystalline materials
X rays
Substrates

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Sundaravel, B., Luo, E. Z., Xu, J. B., Wilson, I. H., Fong, P., Wang, L. S., & Surya, C. (1999). Ion channeling studies on mixed phases formed in MOCVD grown Mg-doped GaN on Al2O3 (0001). 148-152. Paper presented at 1999 IEEE Hong Kong Electron Devices Meeting (HKEDM99), Shatin, Hong Kong, .

Ion channeling studies on mixed phases formed in MOCVD grown Mg-doped GaN on Al2O3 (0001). / Sundaravel, B.; Luo, E. Z.; Xu, J. B.; Wilson, I. H.; Fong, Patrick; Wang, L. S.; Surya, Charles.

1999. 148-152 Paper presented at 1999 IEEE Hong Kong Electron Devices Meeting (HKEDM99), Shatin, Hong Kong, .

Research output: Contribution to conferencePaper

Sundaravel, B, Luo, EZ, Xu, JB, Wilson, IH, Fong, P, Wang, LS & Surya, C 1999, 'Ion channeling studies on mixed phases formed in MOCVD grown Mg-doped GaN on Al2O3 (0001)' Paper presented at 1999 IEEE Hong Kong Electron Devices Meeting (HKEDM99), Shatin, Hong Kong, 6/26/99 - 6/26/99, pp. 148-152.
Sundaravel B, Luo EZ, Xu JB, Wilson IH, Fong P, Wang LS et al. Ion channeling studies on mixed phases formed in MOCVD grown Mg-doped GaN on Al2O3 (0001). 1999. Paper presented at 1999 IEEE Hong Kong Electron Devices Meeting (HKEDM99), Shatin, Hong Kong, .
Sundaravel, B. ; Luo, E. Z. ; Xu, J. B. ; Wilson, I. H. ; Fong, Patrick ; Wang, L. S. ; Surya, Charles. / Ion channeling studies on mixed phases formed in MOCVD grown Mg-doped GaN on Al2O3 (0001). Paper presented at 1999 IEEE Hong Kong Electron Devices Meeting (HKEDM99), Shatin, Hong Kong, .5 p.
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AU - Xu, J. B.

AU - Wilson, I. H.

AU - Fong, Patrick

AU - Wang, L. S.

AU - Surya, Charles

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