Abstract
Rutherford backscattering spectrometry (RBS) and channeling is used to determine the presence of wurtzite and zinc-blende phases of MOCVD grown Mg-doped GaN(0001) on Al2O3(0001) substrate with GaN buffer layer from the off-normal axial scans and is complemented with high resolution x-ray diffraction measurements. The in-plane orientation of wurtzite phase is found to be GaN[101̄0]∥Al2O3[101̄0]. Presence of stacking faults and dislocations at different depths are observed in the GaN epilayer. The effects of rapid thermal annealing (RTA) on the phase contents, thickness and crystalline quality of GaN epilayer are also studied.
| Original language | English |
|---|---|
| Pages | 148-152 |
| Number of pages | 5 |
| Publication status | Published - Dec 1 1999 |
| Externally published | Yes |
| Event | 1999 IEEE Hong Kong Electron Devices Meeting (HKEDM99) - Shatin, Hong Kong Duration: Jun 26 1999 → Jun 26 1999 |
Conference
| Conference | 1999 IEEE Hong Kong Electron Devices Meeting (HKEDM99) |
|---|---|
| City | Shatin, Hong Kong |
| Period | 6/26/99 → 6/26/99 |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
Ion channeling studies on mixed phases formed in MOCVD grown Mg-doped GaN on Al2O3 (0001). / Sundaravel, B.; Luo, E. Z.; Xu, J. B.; Wilson, I. H.; Fong, Patrick; Wang, L. S.; Surya, Charles.
1999. 148-152 Paper presented at 1999 IEEE Hong Kong Electron Devices Meeting (HKEDM99), Shatin, Hong Kong, .Research output: Contribution to conference › Paper
}
TY - CONF
T1 - Ion channeling studies on mixed phases formed in MOCVD grown Mg-doped GaN on Al2O3 (0001)
AU - Sundaravel, B.
AU - Luo, E. Z.
AU - Xu, J. B.
AU - Wilson, I. H.
AU - Fong, Patrick
AU - Wang, L. S.
AU - Surya, Charles
PY - 1999/12/1
Y1 - 1999/12/1
N2 - Rutherford backscattering spectrometry (RBS) and channeling is used to determine the presence of wurtzite and zinc-blende phases of MOCVD grown Mg-doped GaN(0001) on Al2O3(0001) substrate with GaN buffer layer from the off-normal axial scans and is complemented with high resolution x-ray diffraction measurements. The in-plane orientation of wurtzite phase is found to be GaN[101̄0]∥Al2O3[101̄0]. Presence of stacking faults and dislocations at different depths are observed in the GaN epilayer. The effects of rapid thermal annealing (RTA) on the phase contents, thickness and crystalline quality of GaN epilayer are also studied.
AB - Rutherford backscattering spectrometry (RBS) and channeling is used to determine the presence of wurtzite and zinc-blende phases of MOCVD grown Mg-doped GaN(0001) on Al2O3(0001) substrate with GaN buffer layer from the off-normal axial scans and is complemented with high resolution x-ray diffraction measurements. The in-plane orientation of wurtzite phase is found to be GaN[101̄0]∥Al2O3[101̄0]. Presence of stacking faults and dislocations at different depths are observed in the GaN epilayer. The effects of rapid thermal annealing (RTA) on the phase contents, thickness and crystalline quality of GaN epilayer are also studied.
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M3 - Paper
SP - 148
EP - 152
ER -