Iridium Schottky contact on in0.52Al0.48As

S. Kim, G. Cueva, I. Adesida

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The Schottky barrier properties of Ir on In0.52Al 0.48As have been measured after annealing up to 500°C. The barrier height increases to 818 meV for samples annealed at 475°C, while that of Pt quickly saturates at 800 meV beyond 200°C. The result indicates a potential for Ir as a stable gate metallisation for InAlAs/InGaAs HEMTs.

Original languageEnglish
Pages (from-to)665-667
Number of pages3
JournalElectronics Letters
Volume41
Issue number11
DOIs
Publication statusPublished - May 26 2005
Externally publishedYes

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Iridium
High electron mobility transistors
Metallizing
Annealing

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Iridium Schottky contact on in0.52Al0.48As. / Kim, S.; Cueva, G.; Adesida, I.

In: Electronics Letters, Vol. 41, No. 11, 26.05.2005, p. 665-667.

Research output: Contribution to journalArticle

Kim, S. ; Cueva, G. ; Adesida, I. / Iridium Schottky contact on in0.52Al0.48As. In: Electronics Letters. 2005 ; Vol. 41, No. 11. pp. 665-667.
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