Iridium Schottky contact on in0.52Al0.48As

S. Kim, G. Cueva, I. Adesida

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The Schottky barrier properties of Ir on In0.52Al 0.48As have been measured after annealing up to 500°C. The barrier height increases to 818 meV for samples annealed at 475°C, while that of Pt quickly saturates at 800 meV beyond 200°C. The result indicates a potential for Ir as a stable gate metallisation for InAlAs/InGaAs HEMTs.

Original languageEnglish
Pages (from-to)665-667
Number of pages3
JournalElectronics Letters
Volume41
Issue number11
DOIs
Publication statusPublished - May 26 2005

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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