Isoelectronic in doping in p-GaN and its effects on InGaN light-emitting diodes

C. S. Kim, H. S. Cheong, D. S. Kang, J. Y. Kim, C. H. Hong, E. K. Suh, H. J. Lee, H. K. Cho, I. Adesida

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The Effects of isoelectronic In doping in a Mg-doped p-GaN layer on device performance of InGaN light-emitting diodes (LED) were investigated. It was found that there was a decrease of Hall resistivity and contact resistivity in p-GaN with In doping, compared to typical Mg-doped p-GaN. Isoelectronic In doping in p-GaN seems to cause a kind of surfactant effect and/or purification effect similar to the In-doped GaN case, which exhibits a decrease of non-radiative recombination centers and an enhancement of carrier concentration. Light output power and operating voltage were improved by applying an In-doped p-GaN contact layer to the LED.

Original languageEnglish
Pages (from-to)1391-1394
Number of pages4
JournalJournal of the Korean Physical Society
Volume45
Issue number5 II
Publication statusPublished - Nov 2004
Externally publishedYes

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light emitting diodes
electrical resistivity
purification
electric contacts
surfactants
augmentation
causes
output
electric potential

Keywords

  • Isoelectronic in doping
  • Light-emitting diodes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Kim, C. S., Cheong, H. S., Kang, D. S., Kim, J. Y., Hong, C. H., Suh, E. K., ... Adesida, I. (2004). Isoelectronic in doping in p-GaN and its effects on InGaN light-emitting diodes. Journal of the Korean Physical Society, 45(5 II), 1391-1394.

Isoelectronic in doping in p-GaN and its effects on InGaN light-emitting diodes. / Kim, C. S.; Cheong, H. S.; Kang, D. S.; Kim, J. Y.; Hong, C. H.; Suh, E. K.; Lee, H. J.; Cho, H. K.; Adesida, I.

In: Journal of the Korean Physical Society, Vol. 45, No. 5 II, 11.2004, p. 1391-1394.

Research output: Contribution to journalArticle

Kim, CS, Cheong, HS, Kang, DS, Kim, JY, Hong, CH, Suh, EK, Lee, HJ, Cho, HK & Adesida, I 2004, 'Isoelectronic in doping in p-GaN and its effects on InGaN light-emitting diodes', Journal of the Korean Physical Society, vol. 45, no. 5 II, pp. 1391-1394.
Kim CS, Cheong HS, Kang DS, Kim JY, Hong CH, Suh EK et al. Isoelectronic in doping in p-GaN and its effects on InGaN light-emitting diodes. Journal of the Korean Physical Society. 2004 Nov;45(5 II):1391-1394.
Kim, C. S. ; Cheong, H. S. ; Kang, D. S. ; Kim, J. Y. ; Hong, C. H. ; Suh, E. K. ; Lee, H. J. ; Cho, H. K. ; Adesida, I. / Isoelectronic in doping in p-GaN and its effects on InGaN light-emitting diodes. In: Journal of the Korean Physical Society. 2004 ; Vol. 45, No. 5 II. pp. 1391-1394.
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AU - Hong, C. H.

AU - Suh, E. K.

AU - Lee, H. J.

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