Isotype surface-barrier n-TiN/n-Si heterostructure

M. N. Solovan, V. V. Brus, P. D. Maryanchuk

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)

Abstract

n-TiN/n-Si heterostructures are prepared by reactive magnetron sputtering. The current-voltage characteristics of the heterostructures are measured at different temperatures. The temperature dependences of the potential-barrier height and the series resistance of the heterojunction are analyzed. The energy-band diagram for the heterojunctions under study is constructed. The concentration of heterojunction surface states is estimated to be 2.67 × 1013 cm-2. It is established that the dominant mechanisms of current transport through forward- and reverse-biased n-TiN/n-Si heterojunctions are described well within the tunnel and emission models.

Original languageEnglish
Pages (from-to)219-223
Number of pages5
JournalSemiconductors
Volume48
Issue number2
DOIs
Publication statusPublished - Feb 2014
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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