Kinetic properties of TiN thin films prepared by reactive magnetron sputtering

M. N. Solovan; V. V. Brus; P. D. Maryanchuk; T. T. Kovalyuk; J. Rappich; M. Gluba

doi:10.1134/S1063783413110255

Kinetic properties of TiN thin films prepared by reactive magnetron sputtering

M. N. Solovan, V. V. Brus, P. D. Maryanchuk, T. T. Kovalyuk, J. Rappich, M. Gluba

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

Results of investigations of kinetic properties of TiN thin films prepared by dc reactive magnetron sputtering are presented. It is established that the TiN thin films are polycrystalline and possess semiconductor n-type conduction. The carrier concentration is ∼10²² cm^-3, while electron scattering occurs at ionized titanium atoms.

Original language	English
Pages (from-to)	2234-2238
Number of pages	5
Journal	Physics of the Solid State
Volume	55
Issue number	11
DOIs	https://doi.org/10.1134/S1063783413110255
Publication status	Published - Nov 2013
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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title = "Kinetic properties of TiN thin films prepared by reactive magnetron sputtering",

abstract = "Results of investigations of kinetic properties of TiN thin films prepared by dc reactive magnetron sputtering are presented. It is established that the TiN thin films are polycrystalline and possess semiconductor n-type conduction. The carrier concentration is ∼1022 cm-3, while electron scattering occurs at ionized titanium atoms.",

author = "Solovan, {M. N.} and Brus, {V. V.} and Maryanchuk, {P. D.} and Kovalyuk, {T. T.} and J. Rappich and M. Gluba",

year = "2013",

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AU - Solovan, M. N.

AU - Brus, V. V.

AU - Maryanchuk, P. D.

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AU - Rappich, J.

AU - Gluba, M.

PY - 2013/11

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N2 - Results of investigations of kinetic properties of TiN thin films prepared by dc reactive magnetron sputtering are presented. It is established that the TiN thin films are polycrystalline and possess semiconductor n-type conduction. The carrier concentration is ∼1022 cm-3, while electron scattering occurs at ionized titanium atoms.

AB - Results of investigations of kinetic properties of TiN thin films prepared by dc reactive magnetron sputtering are presented. It is established that the TiN thin films are polycrystalline and possess semiconductor n-type conduction. The carrier concentration is ∼1022 cm-3, while electron scattering occurs at ionized titanium atoms.

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Kinetic properties of TiN thin films prepared by reactive magnetron sputtering

Abstract

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