Kinetic properties of TiN thin films prepared by reactive magnetron sputtering

M. N. Solovan, V. V. Brus, P. D. Maryanchuk, T. T. Kovalyuk, J. Rappich, M. Gluba

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)

Abstract

Results of investigations of kinetic properties of TiN thin films prepared by dc reactive magnetron sputtering are presented. It is established that the TiN thin films are polycrystalline and possess semiconductor n-type conduction. The carrier concentration is ∼1022 cm-3, while electron scattering occurs at ionized titanium atoms.

Original languageEnglish
Pages (from-to)2234-2238
Number of pages5
JournalPhysics of the Solid State
Volume55
Issue number11
DOIs
Publication statusPublished - Nov 2013
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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