Large-Signal Modeling of GaN HEMTs Using Hybrid GA-ANN, PSO-SVR, and GPR-Based Approaches

Anwar Jarndal, Saddam Husain, Mohammad Hashmi, Fadhel Ghannouchi

Research output: Contribution to journal › Article › peer-review

Original language	English
Journal	IEEE Journal of the Electron Devices Society
Publication status	Published - Mar 11 2021

Cite this

@article{9bb8069f14f4434fb7f9ef78ae09be94,

title = "Large-Signal Modeling of GaN HEMTs Using Hybrid GA-ANN, PSO-SVR, and GPR-Based Approaches",

author = "Anwar Jarndal and Saddam Husain and Mohammad Hashmi and Fadhel Ghannouchi",

year = "2021",

month = mar,

day = "11",

language = "English",

journal = "IEEE Journal of the Electron Devices Society",

issn = "2168-6734",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}