Light-dependent IV characteristics of TiO 2/CdTe heterojunction solar cells

V. V. Brus; M. I. Ilashchuk; Z. D. Kovalyuk; P. D. Maryanchuk

doi:10.1088/0268-1242/27/5/055008

Light-dependent IV characteristics of TiO ₂/CdTe heterojunction solar cells

V. V. Brus, M. I. Ilashchuk, Z. D. Kovalyuk, P. D. Maryanchuk

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

A new approach was proposed for the analysis of light currentvoltage (IV) characteristics of nonideal heterjunctions in the case of the dominating current transport mechanisms induced by multistep tunnel-recombination processes via interface states. IV characteristics of the anisotype abrupt heterojunction n-TiO ₂/p-CdTe were investigated under different light conditions. The values of the series R _sand shunt R _shresistance, as well as those of the coefficients α and B, which quantitatively describe the dominating tunnel-recombination current transport mechanism, were established to be strongly dependent on light conditions.

Original language	English
Article number	055008
Journal	Semiconductor Science and Technology
Volume	27
Issue number	5
DOIs	https://doi.org/10.1088/0268-1242/27/5/055008
Publication status	Published - May 2012
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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title = "Light-dependent IV characteristics of TiO 2/CdTe heterojunction solar cells",

abstract = "A new approach was proposed for the analysis of light currentvoltage (IV) characteristics of nonideal heterjunctions in the case of the dominating current transport mechanisms induced by multistep tunnel-recombination processes via interface states. IV characteristics of the anisotype abrupt heterojunction n-TiO 2/p-CdTe were investigated under different light conditions. The values of the series R sand shunt R shresistance, as well as those of the coefficients α and B, which quantitatively describe the dominating tunnel-recombination current transport mechanism, were established to be strongly dependent on light conditions.",

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AU - Brus, V. V.

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AU - Kovalyuk, Z. D.

AU - Maryanchuk, P. D.

PY - 2012/5

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AB - A new approach was proposed for the analysis of light currentvoltage (IV) characteristics of nonideal heterjunctions in the case of the dominating current transport mechanisms induced by multistep tunnel-recombination processes via interface states. IV characteristics of the anisotype abrupt heterojunction n-TiO 2/p-CdTe were investigated under different light conditions. The values of the series R sand shunt R shresistance, as well as those of the coefficients α and B, which quantitatively describe the dominating tunnel-recombination current transport mechanism, were established to be strongly dependent on light conditions.

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