A new approach was proposed for the analysis of light currentvoltage (IV) characteristics of nonideal heterjunctions in the case of the dominating current transport mechanisms induced by multistep tunnel-recombination processes via interface states. IV characteristics of the anisotype abrupt heterojunction n-TiO 2/p-CdTe were investigated under different light conditions. The values of the series R sand shunt R shresistance, as well as those of the coefficients α and B, which quantitatively describe the dominating tunnel-recombination current transport mechanism, were established to be strongly dependent on light conditions.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry