LIMITATIONS DUE TO ELECTRON SCATTERING IN ELECTRON BEAM LITHOGRAPHY.

I. Adesida, T. E. Everhart

Research output: Contribution to conferencePaper

1 Citation (Scopus)

Abstract

A Monte Carlo method based on the continuous slowing down approximation was used to calculate the spatial distribution of electron energy dissipation in a thin resist film on different thicknesses of silicon substrates. The distributions were then fitted with Gaussian functions. The Gaussian parameters obtained provided a measure of the impact of electron scattering on electron beam lithography.

Original languageEnglish
Pages189-199
Number of pages11
Publication statusPublished - Jan 1 1980
EventProc on the Symp on Electron and Ion Beam Sci and Technol, 9th Int Conf - St Louis, MO, USA
Duration: May 11 1980May 16 1980

Conference

ConferenceProc on the Symp on Electron and Ion Beam Sci and Technol, 9th Int Conf
CitySt Louis, MO, USA
Period5/11/805/16/80

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Adesida, I., & Everhart, T. E. (1980). LIMITATIONS DUE TO ELECTRON SCATTERING IN ELECTRON BEAM LITHOGRAPHY.. 189-199. Paper presented at Proc on the Symp on Electron and Ion Beam Sci and Technol, 9th Int Conf, St Louis, MO, USA, .