LIMITATIONS DUE TO ELECTRON SCATTERING IN ELECTRON BEAM LITHOGRAPHY.

I. Adesida, T. E. Everhart

Research output: Contribution to journalArticle

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Abstract

A Monte Carlo method based on the continuous slowing down approximation was used to calculate the spatial distribution of electron energy dissipation in a thin resist film on different thicknesses of silicon substrates. The distributions were then fitted with Gaussian functions. The Gaussian parameters obtained provided a measure of the impact of electron scattering on electron beam lithography.

Original languageEnglish
Pages (from-to)189-199
Number of pages11
JournalProceedings - The Electrochemical Society
Volume80-6
Publication statusPublished - 1980
Externally publishedYes

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Electron scattering
Electron beam lithography
Spatial distribution
Energy dissipation
Monte Carlo methods
Thin films
Silicon
Electrons
Substrates

ASJC Scopus subject areas

  • Engineering(all)

Cite this

LIMITATIONS DUE TO ELECTRON SCATTERING IN ELECTRON BEAM LITHOGRAPHY. / Adesida, I.; Everhart, T. E.

In: Proceedings - The Electrochemical Society, Vol. 80-6, 1980, p. 189-199.

Research output: Contribution to journalArticle

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