TY - JOUR
T1 - Lithographically defined synthesis of transition metal dichalcogenides
AU - Kemelbay, Aidar
AU - Kuntubek, Aldiyar
AU - Chang, Nicholas
AU - Chen, Christopher T.
AU - Kastl, Christoph
AU - Inglezakis, Vassilis J.
AU - Tikhonov, Alexander
AU - Schwartzberg, Adam M.
AU - Aloni, Shaul
AU - Kuykendall, Tevye R.
N1 - Funding Information:
Work at the Molecular Foundry was supported by the Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. Authors also acknowledge financial support from the Nazarbayev University (small grant 090118FD5346) and the Ministry of Education and Science of the Republic of Kazakhstan (state-targeted program BR05236454). Thanks to Virginia Altoe. Thanks to Jeff Urban for his support.
PY - 2019/9/30
Y1 - 2019/9/30
N2 - Transition metal dichalcogenides (TMDs) promise to revolutionize optoelectronic applications. While monolayer exfoliation and vapor phase growth produce extremely high quality 2D materials, direct fabrication at wafer scale remains a significant challenge. Here, we present a method that we call ‘lateral conversion’, which enables the synthesis of patterned TMD structures, with control over the thickness down to a few layers, at lithographically predefined locations. In this method, chemical conversion of a metal-oxide film to TMD layers proceeds by diffusion of precursor propagating laterally between silica layers, resulting in structures where delicate chalcogenide films are protected from contamination or oxidation. Lithographically patterned WS2 structures were synthesized by lateral conversion and analyzed in detail by hyperspectral Raman imaging, scanning electron microscopy and transmission electron microscopy. The rate of conversion was investigated as a function of time, temperature, and thickness of the converted film. In addition, the process was extended to grow patterned MoS2, WSe2, MoSe2 structures, and to demonstrate unique WS2/SiO2 multilayer structures. We believe this method will be applicable to a variety of additional chalcogenide materials, and enable their incorporation into novel architectures and devices.
AB - Transition metal dichalcogenides (TMDs) promise to revolutionize optoelectronic applications. While monolayer exfoliation and vapor phase growth produce extremely high quality 2D materials, direct fabrication at wafer scale remains a significant challenge. Here, we present a method that we call ‘lateral conversion’, which enables the synthesis of patterned TMD structures, with control over the thickness down to a few layers, at lithographically predefined locations. In this method, chemical conversion of a metal-oxide film to TMD layers proceeds by diffusion of precursor propagating laterally between silica layers, resulting in structures where delicate chalcogenide films are protected from contamination or oxidation. Lithographically patterned WS2 structures were synthesized by lateral conversion and analyzed in detail by hyperspectral Raman imaging, scanning electron microscopy and transmission electron microscopy. The rate of conversion was investigated as a function of time, temperature, and thickness of the converted film. In addition, the process was extended to grow patterned MoS2, WSe2, MoSe2 structures, and to demonstrate unique WS2/SiO2 multilayer structures. We believe this method will be applicable to a variety of additional chalcogenide materials, and enable their incorporation into novel architectures and devices.
KW - Chalcogenide
KW - Conversion
KW - Lithography
KW - Patterning
KW - TMD
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U2 - 10.1088/2053-1583/ab402a
DO - 10.1088/2053-1583/ab402a
M3 - Article
AN - SCOPUS:85080961450
VL - 6
JO - 2D Materials
JF - 2D Materials
SN - 2053-1583
IS - 4
M1 - ab402a
ER -