Lithography with silicon ions

I. Adesida, M. Zhang, E. D. Wolf

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

Some applications of focussed ion beams are discussed with special emphasis on the lithography aspects. Experimental data on the ranges of H+, Be+ and Si++ in polymethylmethacrylate (PMMA) are presented. The sensitivity of PMMA to Si++ ions is measured to be 0.35 μC/cm2. It is shown by replication through a transmission mask that Si++ ions with low to moderate incident energies, such as found in focussed ion beam systems, can be used for submicrometer lithography in single and multi-layer resist systems.

Original languageEnglish
Pages (from-to)689-701
Number of pages13
JournalJournal of Electronic Materials
Volume13
Issue number4
DOIs
Publication statusPublished - Jul 1 1984

Keywords

  • Focussed ion beam
  • Lithography
  • Multilayer resist
  • Polymethyl methacrylate
  • Silicon ions

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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