Lithography with silicon ions

I. Adesida, M. Zhang, E. D. Wolf

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Some applications of focussed ion beams are discussed with special emphasis on the lithography aspects. Experimental data on the ranges of H+, Be+ and Si++ in polymethylmethacrylate (PMMA) are presented. The sensitivity of PMMA to Si++ ions is measured to be 0.35 μC/cm2. It is shown by replication through a transmission mask that Si++ ions with low to moderate incident energies, such as found in focussed ion beam systems, can be used for submicrometer lithography in single and multi-layer resist systems.

Original languageEnglish
Pages (from-to)689-701
Number of pages13
JournalJournal of Electronic Materials
Volume13
Issue number4
DOIs
Publication statusPublished - Jul 1984
Externally publishedYes

Fingerprint

Polymethyl Methacrylate
Silicon
Lithography
Ion beams
lithography
ion beams
Ions
silicon
Masks
ions
masks
sensitivity
energy

Keywords

  • Focussed ion beam
  • Lithography
  • Multilayer resist
  • Polymethyl methacrylate
  • Silicon ions

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Electrical and Electronic Engineering

Cite this

Lithography with silicon ions. / Adesida, I.; Zhang, M.; Wolf, E. D.

In: Journal of Electronic Materials, Vol. 13, No. 4, 07.1984, p. 689-701.

Research output: Contribution to journalArticle

Adesida, I. ; Zhang, M. ; Wolf, E. D. / Lithography with silicon ions. In: Journal of Electronic Materials. 1984 ; Vol. 13, No. 4. pp. 689-701.
@article{6903ad89727349a4908935cb5c0eb21c,
title = "Lithography with silicon ions",
abstract = "Some applications of focussed ion beams are discussed with special emphasis on the lithography aspects. Experimental data on the ranges of H+, Be+ and Si++ in polymethylmethacrylate (PMMA) are presented. The sensitivity of PMMA to Si++ ions is measured to be 0.35 μC/cm2. It is shown by replication through a transmission mask that Si++ ions with low to moderate incident energies, such as found in focussed ion beam systems, can be used for submicrometer lithography in single and multi-layer resist systems.",
keywords = "Focussed ion beam, Lithography, Multilayer resist, Polymethyl methacrylate, Silicon ions",
author = "I. Adesida and M. Zhang and Wolf, {E. D.}",
year = "1984",
month = "7",
doi = "10.1007/BF02653989",
language = "English",
volume = "13",
pages = "689--701",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
publisher = "Springer New York",
number = "4",

}

TY - JOUR

T1 - Lithography with silicon ions

AU - Adesida, I.

AU - Zhang, M.

AU - Wolf, E. D.

PY - 1984/7

Y1 - 1984/7

N2 - Some applications of focussed ion beams are discussed with special emphasis on the lithography aspects. Experimental data on the ranges of H+, Be+ and Si++ in polymethylmethacrylate (PMMA) are presented. The sensitivity of PMMA to Si++ ions is measured to be 0.35 μC/cm2. It is shown by replication through a transmission mask that Si++ ions with low to moderate incident energies, such as found in focussed ion beam systems, can be used for submicrometer lithography in single and multi-layer resist systems.

AB - Some applications of focussed ion beams are discussed with special emphasis on the lithography aspects. Experimental data on the ranges of H+, Be+ and Si++ in polymethylmethacrylate (PMMA) are presented. The sensitivity of PMMA to Si++ ions is measured to be 0.35 μC/cm2. It is shown by replication through a transmission mask that Si++ ions with low to moderate incident energies, such as found in focussed ion beam systems, can be used for submicrometer lithography in single and multi-layer resist systems.

KW - Focussed ion beam

KW - Lithography

KW - Multilayer resist

KW - Polymethyl methacrylate

KW - Silicon ions

UR - http://www.scopus.com/inward/record.url?scp=0021452486&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0021452486&partnerID=8YFLogxK

U2 - 10.1007/BF02653989

DO - 10.1007/BF02653989

M3 - Article

VL - 13

SP - 689

EP - 701

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 4

ER -