Long-wavelength In 0.53Ga 0.47As metamorphic p-i-n photodiodes on GaAs substrates

J. H. Jang, G. Cueva, D. C. Dumka, W. E. Hoke, P. J. Lemonias, I. Adesida

Research output: Contribution to journalArticle

45 Citations (Scopus)

Abstract

Metamorphic In 0.53Ga 0.47 As p-i-n photodiodes on GaAs substrate exhibiting the lowest dark current ever reported were fabricated and characterized. Their dark current, DC and RF performances were measured and compared for devices of different sizes. Typical dark current for 15-μm-diameter devices was 600 pA under 5-V reverse bias, corresponding to a dark current density of 3.40 × 10 -4A/cm 2. Typical responsivity measured with 1.55-μm optical radiation was 0.55 A/W, corresponding to an external quantum efficiency of 44%. The electrical 3-dB bandwidths of the photodiodes with diameters smaller than 20 μm were over 20 GHz.

Original languageEnglish
Pages (from-to)151-153
Number of pages3
JournalIEEE Photonics Technology Letters
Volume13
Issue number2
DOIs
Publication statusPublished - Feb 1 2001

Keywords

  • Dark current
  • GaAs
  • In Ga As
  • Long wavelengths
  • Metamorphic p-i-n photodiode
  • Optical communication

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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